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    BFY64 Search Results

    BFY64 Datasheets (23)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BFY64
    Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.5 / Hfe=80min / fT(Hz)=200M / Pwr(W)=0.7 Original PDF 56.06KB 1
    BFY64
    Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.5 / Hfe=80min / fT(Hz)=200M / Pwr(W)=0.7 Original PDF 10.83KB 1
    BFY64
    Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF 52.83KB 1
    BFY64
    Micro Electronics Semiconductor Device Data Book Scan PDF 59.11KB 1
    BFY64
    Micro Electronics Misc. Data Book Scans 1975/76 Scan PDF 73.89KB 2
    BFY64
    Micro Electronics Semiconductor Devices Scan PDF 73.73KB 1
    BFY64
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.91KB 1
    BFY64
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 55.21KB 1
    BFY64
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 107.78KB 1
    BFY64
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 169.97KB 1
    BFY64
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 97.7KB 1
    BFY64
    Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 66.98KB 1
    BFY64
    Unknown Shortform Electronic Component Datasheets Short Form PDF 52.57KB 1
    BFY64
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 73.34KB 1
    BFY64
    Unknown Transistor Replacements Scan PDF 67.73KB 1
    BFY64
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 174.53KB 1
    BFY64
    Semico Medium Power Transistors Scan PDF 1.28MB 12
    BFY64
    SGS-Ates Shortform Data Book 1977/78 Short Form PDF 82.25KB 2
    BFY64
    SGS-Ates Semiconductor Data Book 1976/77 Scan PDF 356.43KB 5
    BFY64
    SGS-Ates Small Signal Transistors 3rd Edition 1978 Scan PDF 320.83KB 5
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    BFY64 Price and Stock

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    Infineon Technologies AG BFY64004SAMB4SA1

    - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: BFY64004SAMB4SA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BFY64004SAMB4SA1 Waffle Pack
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    SGS Thomson BFY64

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-205AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFY64 128
    • 1 $3.52
    • 10 $3.52
    • 100 $1.76
    • 1000 $1.76
    • 10000 $1.76
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    Others BFY64

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-205AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFY64 70
    • 1 $1.88
    • 10 $1.88
    • 100 $1.13
    • 1000 $1.13
    • 10000 $1.13
    Buy Now

    Fairchild Semiconductor Corporation BFY64

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-205AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFY64 20
    • 1 $1.88
    • 10 $1.73
    • 100 $1.50
    • 1000 $1.50
    • 10000 $1.50
    Buy Now

    Infineon Technologies AG BFY640-04(P)

    NPN Silicon Germanium RF Transistor (Alt: SP000668264)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik BFY640-04(P) 26 Weeks 1
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    BFY64 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFY64

    Abstract: transistor BFY64 A 2039 g
    Contextual Info: BFY64 SILICON PLANAR PNP H IG H -C U R R E N T G E N E R A L P UR PO SE T R A N S IS T O R The BFY 64 is a silicon planar epitaxial PNP transistor in .Jedec T Q -3 9 metal case. I t is designed fo r digital and analog applications at current levels up to 500 m A , line driver,


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    bfy64transistor bfy64a 2039 g PDF

    BFY64

    Contextual Info: BFY64 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    bfy64o205ad10/10m19-jun-02 PDF

    BFY640-04

    Abstract: bfy640 BFY640 ES
    Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ


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    bfy640bfy640-04bfy640 es PDF

    Contextual Info: BFY64CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    bfy64csm10/10m17-jul-02 PDF

    2SA1005K

    Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
    Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534


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    mps3906ns3906ntm3906pet3906+12pxt3906tp53832sa1005kbc5122n36442n5383bc251low-power silicon pnpkt310bc204b2n6012sa1005l PDF

    Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


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    bfy640bfy640b PDF

    BFY64

    Abstract: transistor BFY64
    Contextual Info: BFY64 SILICON PLANAR PNP H IG H -C U R R EN T G ENERAL PURPOSE TRANSISTOR The B F Y 64 is a s ilic o n p lanar e p ita x ia l PNP tra n s is to r in Jedec T O -3 9 m eta l case. I t is designed fo r d ig ita l and analog a p p lic a tio n s a t c u rre n t levels up to 5 0 0 m A , lin e d rive r,


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    bfy64transistor bfy64 PDF

    BFY64

    Contextual Info: BFY64 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    bfy64o205ad10/10m17-jul-02 PDF

    Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ


    Original
    bfy640 PDF

    Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


    Original
    bfy640bfy640b PDF

    BFY64

    Contextual Info: BFY64 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    bfy64o205ad10/10m1-aug-02 PDF

    BFY64CSM

    Contextual Info: BFY64CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    bfy64csm10/10m2-aug-02 PDF

    npn transistor high current

    Abstract: transistor "micro-x" "marking" 3 BFY640 germanium microwave Micro-X Marking E RF TRANSISTOR NPN MICRO-X low noise Micro-X marking "K"
    Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz


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    bfy640bfy640bnpn transistor high currenttransistor "micro-x" "marking" 3+4germanium microwavemicro-x marking erf transistor npn micro-xlow noise micro-x marking "k PDF

    bfy64

    Abstract: transistor BFY64 bfx64
    Contextual Info: BFY64 HIGH-CURRENT GENERAL PURPOSE TRANSISTOR DESCRIPTION The BFX64 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is designed for digital and analog applications at current levels up to 500 mA, line driver, memory applications and


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    bfy64bfx64transistor bfy64 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c PDF

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


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    BFY83

    Abstract: BLY48
    Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


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    bft37abft39bft40bft44+8bft45bft46csmbft48bft49bft53bft54bfy83bly48 PDF

    IRF5402

    Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
    Contextual Info: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M


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    ME0412

    Abstract: BC116 bc153 BC154 ME0413 ME0492 BC126 me0411 ME0402 V405A
    Contextual Info: M icro - Electronics Sem iconductors PN P Transistors PN P General Purpose Transistors REFER EN C E T A B L E Code o o >> V EBO V BC153 BC154 40 40 5 5 50 160 BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 6 6 5 45 45 25 ME0411 ME0412 ME0413 h FE min.


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    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149 PDF

    Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    2n656a2n657a2n6962n697a+62n6982n699b2n10532n11162n11172n1118 PDF

    Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO (V) (V) (V) *VCER •cao CnA> h HE VCBO (V) ® lc ® V GE VCE(SA T ) ® k ; *T (IDA) (m A) (M iz) (V) 00 U ce o NF (pF) •on (n«> *off (ns> (dB) *TYP *TYP •TYP *TYP


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    bfx86bfx87bfx88bfx98+6bfy50bfy51bfy52bfy55bfy56abfy57 PDF

    BSW65

    Abstract: BSV12 BSW66 BSS46 BFX98 BFY64 BFX86 BFX87 BFX88 BFY50
    Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT ) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP


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    bfx86bfx87bfx88bsx64+11bsx95bsx96bsy34bsy51bsw65bsv12bsw66bss46bfx98bfy64bfy50 PDF