BFT44 Search Results

BFT44

Abstract: BFT45
Contextual Info: N AM ER P H I L IP S /D IS C R E T E h ^Z ^ 3 3 *1 3 1 D Q Q S77SQ 417 APX BFT44 BFT45 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar epitaxial transistors in TO-39 metal envelopes, intended as general purpose amplifiers and switching devices in industrial and telephone applications.

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

Contextual Info: BFT44 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BFT44 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BFT44S Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

BFT44

Abstract: BFT45 DD27722
Contextual Info: N AMER PHILIPS/DISCRETE m bbSB'Ol 0057750 H17 bTE D '' BFT44 BFT45 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P la n a r e p ita x ia l tra n s is to rs in T O - 3 9 m e ta l e n v e lo p e s, in te n d e d as general p u rp o s e a m p lifie r s and s w itc h in g d e v ic e s in in d u s tria l and te le p h o n e a p p lic a tio n s .

BFT44

Abstract: d0422 BFT45
Contextual Info: BFT44 BFT45 PHILIPS INTERNATIONAL SL.E D • 711002b DOMZnfl böG B i PHI N 1 - 2 * ? - jS " SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar epitaxial transistors in TO-39 metal envelopes, intended as general purpose am plifiers and switching devices in industrial and telephone applications.

Contextual Info: BFT44S Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

BFT44

Contextual Info: BFT44 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016) 0.53 (0.021)

BFT44S

Contextual Info: BFT44S Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

BFX36

Abstract: transistor 200V 100MA NPN BFT44 BFY81 PNP TO77 package bfx80
Contextual Info: Search Results Part number search for devices beginning "BFT44" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BFT44 PNP TO39 300V 0.5A 100typ - 10/10m 60MHz

Contextual Info: N AUER PHILIPS/DISCRETE b b S a ^ l QQS77SQ 417 BFT44 BFT45 b^E B APX SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar epitaxial transistors in TO-39 metal envelopes, intended as general purpose amplifiers and switching devices in industrial and telephone applications.

BFT44

Contextual Info: BFT44 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) PNP SILICON TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • High Voltage 5.08 (0.200) typ.

BFT44

Abstract: BFT45
Contextual Info: BFT44 BFT45 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar e p it a x ia l tra ns is to rs in T O 3 9 me tal p a ckages, i n te n d e d as general p u rp o s e a m p l i f i e r s and s w i t c h i n g devices in i n d u s tria l and te l e p h o n e a p p lic a tio n s .

bc657

Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
Contextual Info: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

BFR80

Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m

2n2222 h 331 transistors

Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
Contextual Info: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300

BDY77

Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74

BF689

Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.