FIL331 Search Results

transistor 400v 3a 40w

Abstract: 40w electronic ballast BUL45A crossover LE17
Contextual Info: bOE J> • fil331fl7 DDGOSDS b27 « S M L B SEMELAB PLC SEMELAB " T - 3 3 - /Í BUL45A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M EC H A N IC A L D A T A Dimensions in mm Designed for use in electronic ballast

Contextual Info: SEMELAB LTD 37E T> | fil33167 0000D23 3 1 TVpe No. Reliability Polarity Option 2N5656 2N5657 2N5663 2N5664 2N5665 SCREEN HI-REL HI-REL NPN NPN NPN NPN NPN 2N5666 2N5667 2N5671 2N56722N5675 HI-REL HI-REL CECC CECC HI-REL NPN NPN NPN NPN PNP 2N5676 2N5679 2N5680

BUW60

Abstract: LE17 Scans-007954
Contextual Info: SEMELAB LTD 37E T> fil331fl7 DDOOnfl SEMELAB JUL 0 8 198Q BUW 60 NPIM MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation voltage and high gain for reduced load operation M E C H A N IC A L D A T A Dim ensions in mm FEATURES

sml3565cn

Contextual Info: SEM E LA B PLC bOE D fil331fl? ODGGflGS 37T • SI'ILB m i MOS POWER INI IF F i SML4065CN SML3565CN SML4080CN SML3580CN SEME LAB 400V 350V 400V 350V 9.0A 9.0A 8.0A 8.0A 4 0.6512 0.65 Í1 0.8012 0.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: SEMELAB PLC bPE D • 8133167 QQQOblO 147 H S U L B ■■■I _ T '-'i'V M = rr= MOSPOWER4 “ I G B T m i ” SEME LAB SML65G100BN 1000V 65A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: im iF fi llll SEME IRF150SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 115 VDss 100V 0.25 3.0 ik 1 ^ ^DS(on) 0.070Q • HERMETICALLY SEALED SURFACE MOUNT PACKAGE i ' 1 1 FEATURES r t ^D(cont) o o> • SMALL FOOTPRINT - EFFICIENT USE OF

SML1002RCN

Abstract: 1002rcn 1002R sml1002r4CN
Contextual Info: SEHELAB bGE D PLC 0133107 GDOGTRG fi2fl « S M L B Mil FFË SEME MOS POWER 1 4 "T-3C1- im 1000V 900V 1000V 900V SML1002RCN SML902RCN SML1002R4CN SML902R4CN LAB 5.5A 5.5A 5.0A 5.0A 2.00Q 2.0012 2.4012 2.4012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML601R6KN

Abstract: LE17 SML601R3KN LG plc A-1331A
Contextual Info: SE H E LA B PLC b0E ^ G 0D Gt i 72 T21 •SMLB MOS POWER =K= 4 Mil SEME LAB SML601R3KN SML601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60ÌÌ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS *D ’ dm VGS PD VSTG All Ratings: Tc = 25°C unless otherwise specified.

diode 152

Abstract: BFC12
Contextual Info: IUI i^ E INI SEME BFC12 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 e (0 463) VDSS Terminal 1 Terminal 3 Source 2* Gate Terminal 2 Terminal 4 Drain Source 1