BFY83
Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34
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bft37abft39bft40bft44+8bft45bft46csmbft48bft49bft53bft54bfy83bly48
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BF178
Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+132n9182n42522n4253bfq36bf257/8/9bfq37bf178bf179bft79bf1772n2219 2n2905bf338bc325
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F13S
Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253high59bs9365f13sbfq35bc177 pnp transistortransistor bc303transistor t05bf1792n3440 equivalentbc304 equivalentbc143 equivalent
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BC107 equivalent transistors
Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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bcw35gpbs93652n40362n4037+12bs33652n4030bc107 equivalent transistorsequivalent transistor bc108bc109 equivalenttransistor t05bc108 equivalentbc107 equivalentequivalent transistor bc1072n2484 equivalent transistorsequivalent of transistor bc108bc177 equivalent
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C495 transistor
Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253bs93002n2219ac495 transistorc7352n1893 equivalentc644c735 o2n2222 hfec749transistor c633npn c460
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smd diodes s4 1.5w
Abstract: marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
Contextual Info: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 ) ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )
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irf130smd05nirfn130smd05irf130smd05irf130smd05dsg+11o276aa650pfsmd diodes s4 1.5wmarking code pad1 smdu3158general semiconductor smd diodes s4pd9002smd diode marking f4diode smd marking gpo 27lvt 817smd code marking a3a
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PD9002
Abstract: comparison cd 4093 smd code marking a3a SCCB spec stanag LISTING 2N2369 military AQAP-1 IC cd 4093 CECC - Detail Specifications smd code marking a4a
Contextual Info: EXPERIENCE AND INNOVATION EXPERIENCE AND INNOVATION EXPERIENCE AND INNOVATION HIGH RELIABILITY and SCREENING OPTIONS DOC 2624 ISS 4 Contents 1. Introduction 1 2. Quality Approvals 2 3. Material Qualification 3 3.1 Header/Cap/Wire Approval Procedures 3.2 Die Approval Procedure
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168hrspd9002comparison cd 4093smd code marking a3a+7sccb specstanag listing2n2369 militaryaqap-1ic cd 4093cecc - detail specificationssmd code marking a4a
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BFX36
Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
Contextual Info: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE
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g0g045125min10/30mbft53+1110minbft5430minbft57bfx36110hbfx81bfy64bfy84bft58bft59
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BFX36
Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
Contextual Info: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ
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fll331fl7bft37bft39bft40+14bft41bft57bft58bft59bft60bft61bfx362n3904dcsm2n3904d2n36802n2222adcsmbfx11bfy84bly11
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NPN pnp MATCHED PAIRS 2n2905A 2N2219A
Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW
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bs93652n40362n4037bs3365+122n40302n4031npn pnp matched pairs 2n2905a 2n2219abfr39bfr80bfr40bs9300bfr81bc326bfr79tis90bfr62
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C736
Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+152n9182n42522n4253bs93002n2219ac736c495 transistorbc303 equivalent2n2222a 026c735bc143 equivalentbc143c644equivalent transistor 2n1711transistor c633
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QR204
Abstract: CECC Detail Specifications 2N2369 equivalent
Contextual Info: IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm inches 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 ) ! VDSS ID(cont) RDS(on) 1 0 .1 6 (0 .4 0 0 )
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irf130smd05nirfn130smd05irf130smd05irf130smd05dsg+8o276aa650pfmil-prf-19500cpr\10192006\seme\irf13003-jan-2007qr204cecc detail specifications2n2369 equivalent
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2S321
Abstract: 2SB646 2N5111 2n3063 ZTX50 LOW-POWER SILICON PNP 475 50K ROHM 2N1654 2N5857
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number NB223XJ NB223YJ BC556P BC856BR BC856BR BC856BR BC856CR V BR CEO 10 15 20 - 25 2SB1234 2SB1235 2Nl196 2Nl197 BCY93 BCY94 ZTX504 BCY95 ZT189 BC311 ~~~~~~3 2SAll14 BCY22 BFX41 2N1922 2SAl158Y 2N1275 2N5111 BFR60 ~~J;~2B
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nb223xjnb223yjbc556pbc856br+11bc856cro-2362s3212sb6462n51112n3063ztx50low-power silicon pnp475 50k rohm2n16542n5857
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BFR80
Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m
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fil331bfq375/10mbfq38s+1125min5/50mbfr3810/3mbfr52bfr80bfr79bfr81bft69bfw32700m
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C495 transistor
Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250
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bf594bf194bf595bf195+10bf597bf1972n4996bs93002n2219ac495 transistorbf194 equivalentbf357bf195 equivalenttransistor c495
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diode bs 9300
Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
Contextual Info: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)
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irfnj9130irf9130smd05-100vsmd05+13o-276aairf9130smd05dsgo276aadiode bs 9300lvt 817automatic railway gate control systempd9002u3158jan,tx series semiconductors2n2369 diesmd code marking a3asmd-05smd diodes s4 1.5w
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2s301bs9300-c-5982s305bs9300-c-366+162s3072s322cv7396bs9300-c-396cv7647bs9300-c-647tis43equivalent of transistor bc214bf257 texasequivalent of transistor bc212 bc 2142n696 texas instrumentsq2t2222tis70bfr40kd 2060 transistorbf195 equivalent
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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ot-23bsx19 equivalentbc350bc107+7bfw63bcw17short data on 2n744transistor bc2872n3020bc4512n2868
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2369 equivalent
Contextual Info: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)
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irfnj9130irf9130smd05-100vsmd05+5o-276aao276aa860pfirf9130smd05dgs2n2369 equivalent
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2N290
Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200
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4-95j02n35702n35712n3572+92n9182n42522n4253high59bs93652n290bc143bft79t018
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2N3053 equivalent
Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100
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2n3724a2n3725a2n3244bf257+14bs93652n40362n4037bs33652n3053 equivalentbf258 equivalent2n2219 2n2905bc107 equivalent transistorsbc109 equivalentbf178bc107 pnp equivalentbc177 equivalentbc303f-002
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EQUIVALENT TRANSISTOR bc108
Abstract: bc109 equivalent BC107 equivalent transistors transistor t05 equivalent transistor of 2n2219a BC177 equivalent BC107 equivalent bc325 bc143 BC107
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads—38,1mm (1,5in) at a small extra
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bcw35gpbs93652n40362n4037+12bs33652n4030equivalent transistor bc108bc109 equivalentbc107 equivalent transistorstransistor t05equivalent transistor of 2n2219abc177 equivalentbc107 equivalentbc325bc143bc107
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BC142 equivalent
Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20
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bft39bft40bft41bft29+15bft30bft31bfy50bfy51bfy52bft53bc142 equivalentbc302 equivalentbf3372n3440 8cbf2592n3440 complementary2n3829bf258 equivalent2n4260
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