2N918 Search Results

NPN 200 VOLTS POWER TRANSISTOR

Abstract: NPN 300 VOLTS POWER TRANSISTOR 2N918UB TRANSISTOR DATA 2N918UBJ chip die npn transistor
Contextual Info: 2N918UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918UBJ

2N918

Abstract: 2N3600 RCA-2N918 874-LA N3600 LA 4303 TO72 package RCA-2N3600 RCA Transistor 2n918 transistor
Contextual Info: File No. 83 R F Pow er T r a n s is t o r s Solid State Di vision 2 N 918 2 N3600 RCA-2N918 and RCA-2N3IÏ00 are double-diffused epitaxial planar tran sisto rs o f the silicon n-p-n type. They are extremely useful in low -noise-am plifier, o sc il­ lator, and converter applications at VHF frequencies.

2907A EQUIVALENT

Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
Contextual Info: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

BC177 NPN transistor

Abstract: BC377 2S026 transistor 200mhz 100w 2n930 TRANSISTOR bc177b IC202 to-53
Contextual Info: Search Results Part number search for devices beginning "2N918A" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N918ACSM NPN LCC1 15V 0.003A 20 - 1/3m 600MHz

Contextual Info: 2N918JAN, JTX, JTXV, JA N S processed per M IL-S-19500/301 NPN Silicon Small-Signal Transistor C R YSTA IO N C S 2805 Veterans Highway Suite 14 Ronkonkoma. N Y . 11779 de^Ç'ieO lor uRta hiof fr«qu*ncy ampi.fier dKxcationE M AXIM UM R A T IN G S AatkftQ Coi«cl X E m * * V04UQ«

UHF UHF Transistors

Abstract: 2N3839
Contextual Info: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100

Contextual Info: 2N918+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)10m

Contextual Info: 2N918 asi NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS lc 50 mA V ce 15 V P diss 300 mW @ Tc = 25 °C P diss 200 mW @ TA = 25 °C Tj -65 °C to +200 °C

Contextual Info: TYPE 2N918 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 7 3 1 1 9 8 9 , M A R C H 1 9 7 3 FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • Low Noise Figure . . . 6 dB max at 60 MHz • High Neutralized Power Gain . . . 15 dB min at 200 MHz

2N918 chip

Abstract: 2n918 plastic
Contextual Info: DIONICS INC. 65 R U S H M O R E ST., W E ST B U R Y , N Y. 11590 516»997»7474 Dl 3424 • 3423 NPN SILICON MATCHED PAIR TRANSISTOR CHIPS SIMILAR TO 2N918 WITH MATCHING CHARACTERISTICS 100% PROBED DIONICS INC. 65 RUSHMORE ST., WESTBURY, N Y. 11590 Dl 3424 • 3423

2n3287

Abstract: 2N3294 40244 2N335 2N5851
Contextual Info: 8134693 SEMICOA 40 D e J fll34bc]3 0 G 0 0 1 3 1 7 J ~ - T - a i - C > \ U-H-F AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 210839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288

2N918DCSM

Contextual Info: 2N918DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N918 JAN

Abstract: 2N918 2N918 JANTXV 2n918 transistor
Contextual Info: Data Sheet No. 2N918 Generic Part Number: 2N918 Type 2N918 Geometry 0013 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/301 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-72 case. • Also available in chip form using

DUAL TRANSISTORS IN TO77 PACKAGE

Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484

Contextual Info: 2N918ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N918 semelab

Contextual Info: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

rg-400

Abstract: 2N918ADCSM
Contextual Info: 2N918ADCSM ELECTRICAL CHARACTERISTICS Tcase = 25°C unless otherwise stated Parameter Test Conditions VCB=15V Min. Typ. Max. Unit IE=0 10 nA Ta=150°C 1 µA ICBO Collector Cutoff Current V(BR)CBO Collector – Base Breakdown Voltage IC=1µA IE=0 30 VCEO(sus)

2n3600

Abstract: 2N918 sy 171 BFX73 19S8 BFX73-2N918 G2053
Contextual Info: „ S C S -T H O M S O N B FX 73-2N 918 fc7 # 2 N 3 6 0 0 S G S - T H 0MS0N HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. They are designed for low-noise VHF amplifiers, os­

Contextual Info: 2N918 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)10m

Contextual Info: 2N918J Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)

2N918JAN

Contextual Info: TE£CHnTcAL DATA ^ 2N918 NPN Silicon Small-Signal Transistor CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoms, N.Y. 11778 designed for ultra-high frequency amplifier applications M A X IM U M R A T IN G S Symbol Value Collector-Emitter Voltage Rating

2N918ACSM

Contextual Info: 2N918ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N918 motorola

Abstract: 2N918 MHQ918 MHQ918H MHQ918HX MHQ918HXV MIL-STD-750 2072 14NB
Contextual Info: I MHQ918 MHQ918H MHQ918HX MHQ918HXV I I I I QUAD DUAL NPN HERMETIC HIGH FREQUENCY designed for low-level, Low Noise Figure fT= 850 Transistors IC Automatic applications. Product — to 2N918 Package — Compact Insertion for Hi-Rel See Tables MAXIMUM amplifier