MD2219A Search Results

DUAL TRANSISTORS IN TO77 PACKAGE

Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484

MD2219AFHXV

Abstract: md2219af MMCM2222AHXV MMCM2222AHXV/HS
Contextual Info: MOTOROLA SC XSTR S/R F 4bE » • b3b72S4 0012675 2 ■ flO T b '7 ^ 2 7 -O f MOTOROLA SEMICONDUCTOR! TECHNICAL DATA É&â DM0 MD2219AFHXV/HS (DUAL) MMCM2222AHXV/HS (SINGLE) Surface Mountable Small-Signal Transistors u /fiii Discrete Military Operation 50 Volt, 200 Milliampere Bipolar NPN

MQ-2

Contextual Info: MOTOROLA SC XSTRS/R F -f-WX} 15E D I b3b7554 DGfibSEB 7 | M A X I M U M R A T IN G S Rating Symbol MD2218,A MD2219A.F MQ2218/A MD2218AF MQ2219,A MD2219AF Unit Collector-Emitter Voltage v CEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage

md2219AFHXV

Contextual Info: MD2219AFHXV . CRYSTALONCS , 280S Veterans Highway NPN Silicon Dual Small-Signal Transistors su ite u Ronkonkoma. m y. 1 1779 . . designed for general-purpose switching and amplifier applications. M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage

Contextual Info: MD2219AF Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MD2219A Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MD218

Abstract: MD2219 MD2218 WE VQE 11 E MD2218A MD2218AF MD2218F MD2219A MD2219AF MD2219F
Contextual Info: MD2218, MD2218A SILICON MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218,A,MQ2219,A MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation ap­

Contextual Info: \Pioau.ctit Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAXIMUM RATINGS MD221BAF MD2219AF MO2218.A MD2218AF Symbol MQ2219.A MD2219AF Rating Unit Collector-Emitter Voltage VCEO 30 40 Vdc

Contextual Info: MD2219AFHXV Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)200m P(D) Max. (W)400m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u

Contextual Info: MD2219AFHS Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)200m P(D) Max. (W)400m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u

2n2484 complementary

Abstract: Metal 2n2222 2N2484 2N2222 DUAL TRANSISTORS IN TO77 PACKAGE 2N2222/2N2222 2N2222/2n2484 complementary
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUIV. PD (Total) ^FE V CEO SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484 45 2N2913

72s4

Abstract: MD2218 MD2218AF MD2218F MD2219 MD2219AF MD2219F MQ2218 MQ2219
Contextual Info: MOTOROLA SC 6367254 -CXSTRS/R Tb F> MO TO RO L A SC XSTRS/R D E ^ ti3Li7E!54 82435 96D F M D 2 2 1 8A F M D2219AF M 02218, A MD2218AF Symbol M 02219,A MD2219AF VCEO 30 40 Collector-Base Voltage VcBO 60 75 Vdc Emitter-Base Voltage V EBO 5.0 6.0 Vdc 500 *C

Q2219

Abstract: Q2219A uj 44 MQ-2
Contextual Info: MOTOROLA SC ÍXSTRS/R 6367254 Tb F> MOTOROLA SC XSTRS/R DE~ | t i B t i T S S M 96D 8 2 4 3 5 _ T F □ G f l E Ll 3 S D ^ i- 9 M A X I M U M R A T IN G S Symbol Rating M D 22 18 A F M D 2219AF M 02218, A MD2218AF M Q2219,A MD2219AF U nit Cotlector-Emitter Voltage

MD6100

Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
Contextual Info: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)

2N2222A npn transistor

Abstract: 2n2222a die CMPT2222A CZT2222A CXT2222A 2n2222a datasheet Transistor 2N2222A 2N2222A NPN transistor datasheets CP191 PN2222A
Contextual Info: Central TM PROCESS CP191 Small Signal Transistor Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2n2222a die

Abstract: Transistor 2N2219A die CMPT2222A CXT2222A CZT2222A 2N2219A 2N2222A CMST2222A CP191 MD2219A
Contextual Info: PROCESS CP191 Central Small Signal Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH