72S4 Search Results

CA2418

Abstract: CA2418R gp 532 714F-01 12CHANNEL 72S4
Contextual Info: M OTO RO LA SC XSTRS/R F 1SE D | t,3t.72S4 □ □ÖÖ5GCJ 1 | MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA C A 2418 C A 24 18 R The RF Line 12-C h an n el 1 2 0 M H z C A T V Reverse A m p lifie rs 18.5 dB 5 -1 2 0 M H z CATV REVERSE AMPLIFIERS . . . designed specifically for use as return amplifiers for mid-split and high-split 2-way

BUT51P

Abstract: 340D-01 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor
Contextual Info: MOTOROLA SC XSTRS/R F 1ZE 0 I b3fc.72S4 □QäMö?ti Ô I r-33-z9 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA AD V A N C E INFORMATION 15 A M P E R E S NPN SILICON POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IE S NPN SILICO N POWER D ARLIN GTO N TRAN SISTO RS

Contextual Info: MOTOROLA SC XSTRS/R F 2feiE D • b3f ci 72S4 QDTGS31 MOTOROLA 4 ■ ■'T'-SS- IS SEMICONDUCTOR ^ TECHNICAL DATA PRELIMINARY DATA t i U i i MRH640NHXV, MRH640NHS PROCESSED TO MIL-S-19500 f# # f # # / RADIATION TOLERANT TRANSISTOR Discrete Military Operation

H16S

Abstract: je210
Contextual Info: M OT O RO LA SC XSTRS/R 1EE F § b3fc.72S4 MOTOROLA ^ | MJ8502 MJ8503 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s O O flim ? D a ta . S h e e t S.0 A M P E R E NPN SILICON POWER TR AN SISTO RS SWITCHMODE SE R IE S NPN SILICO N POWER TRANSISTORS

Bt 35 F transistor

Abstract: Bt 35 transistor
Contextual Info: DE^t.3L,72S4 0 D Ô E D 4 7 3 | ~ M O T O R O L A SC Í X S T R S / R FD6367254 ’ -V * MOTOROLA SC XSTRS/R 96D F i . 82047 R ating Sym bol V alu e v CEO 50 Vdc C o lle ctor-B ase V olta g e V cB O 50 Vdc Em itter-B ase V oltag e VebO 3.0 Vdc ic 50 m Adc

MMBT2907L

Abstract: BT2907AL
Contextual Info: XSTRS/R F MOTOROLA SC | fc,3t>72S4 □QflS'JTM 2 1EE T-J17-^ M A X I M U M R A T IN G S S ym bol MPS2907L MPS2907AL U n it C o lle ctor-E m itter Voltage VCEO 40 60 Vdc C ollector-Base V o lta g e VCBO Em itter-Base Voltage Vebo 5.0 Vdc *C 600 m A dc Rating

MJ8503

Abstract: MJ8502 MJ8504 J8503
Contextual Info: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S

BC160 MOTOROLA

Contextual Info: MO TG R C L A SC XSTRS/R F 15E D I fc>3fc.72S4 Gaat.Mt.2 2 I BC160, -6, -10, -16 BC161, -6, -10, -16 M A X IM U M RATINGS Sym bol BC 160 BC 161 U nit Collector-Emitter Voltage VC EO 40 60 Vdc C ollector-Base Voltage VCBO 40 60 Vdc Em itter-Base Voltage VEBO

TPM4040

Abstract: ITT 1N4007 BALLAST MOTOROLA TRANSISTOR UO 112 1N4007 motorola rf Power Transistor 1N4007, ITT 1N4007 DC COMPONENTS tantal PACKAGE 1N4007 itt
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • f c>3t , 72S4 GO^Sa^M fi « f l O T h ~T=-3 3 ~ 3 -~ l MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA TPM 4040 The RF Line UHF Power Transistor The TPM4040 is an internally matched transistor in a push-pull package specially

3n210

Abstract: 3N209 feedthru cap g2f 160 c2 C96d
Contextual Info: MOTOROLA SC ÍXSTRS/R F> 6367254 M OT O RO L A i E b3t.72S4 OOaat.15 3 SC (XSTRS/R F) 96D 8 2 6 1 5 D _ T - 3 t - 2. S ' 3N209 MAXIMUM RATINGS Rating Sym bol Value Unit Vd s 25 Vdc V d G1 VDG2 30 30 Vdc Drain-Source Voltage Drain-Gate Voltage CASE 20-03, STYLE 9

2N6386

Abstract: MOTOROLA 6-38-7
Contextual Info: MOTORCL A SC X S TRS/ R F 15E 0 | b3fc.72S4 0 0 0 ^ 4 4 2N6386 2N6387 2N6388 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER SILICON TRANSISTORS DARLINGTON . . . designed for general-purpose amplifier and low-speed switching 8 AND 10 AMPERE applications.

2sc 1948 a

Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6 3 6 7 2 54 MOTOROLA SC Tb XSTRS/R F M AXIM UM RATINGS D eT | b3L.72S4 O D Ö I T M ? 96D 8 1 9 4 7 ^ D _ * Symbol Value Unit Coiiector-Emitter Voltage VCEO 32 V Collector-Base Voltage VcBO 32 V Emitter-Base Voltage Ve b o

BC618

Abstract: bc617
Contextual Info: MOTOROLA SC XSTRS/R 1EE 0 | F b3fc.72S4 □□Ö5ä7t> 5 | BC617 BC618 M A X IM U M R A TIN G S R a tin g Sym bol BC 617 BC 618 U nit Collector-Emitter Voltage VcEO Collector-Base Voltage VcBO 40 55 Vdc 50 80 Em itter-Base Voltage Vebo C ASE 29 04, STYLE 17

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

MJE1661

Abstract: MJE1660 TO-225AB MJE1291 "case 90-05" CASE 90-05
Contextual Info: MOTOROLA SC X S T R S /R 1EE 0 I F b3fe.72S4 0 0 0 5 3 4 3 0 | T-3 3 -J3 MOTOROLA NPN SEMICONDUCTOR MJE1660, MJE1661 TECHNICAL DATA æ 15 AMPERE POWER TRANSISTORS SILIC0N W ' m e d iu m -p o w e r SIUCON t r a n s is t o r s 40-60 VOLTS 90 WATTS . . . designed for use in power amplifier and switching applications.

VK211-073B

Abstract: PT8852 PT8852A CASE211-07
Contextual Info: 12E D I MOTOROLA b3t.72S4 0DÛÛ133 4 | MOTORCLA SC X S T R S /R -f-5 3 -jJ F SE M IC O N D U C T O R TECHNICAL DATA PT8852 PT8852A The RF Line V H F P o w e r T r a n s isto rs . .de signed for 12.5 Volt low band VH F large-signal power amplifier applications in

MRF526

Abstract: transistor 5809 S5809
Contextual Info: 6367254 MOTOROLA SC X S TR S /R FT -0 4 C 2 9 8 1 8 M O T O R O L A SC -CXSTRS/R F3- m 04 DF|b3t.72S4 P.O. BOX 20912 • PHOENIX, ARIZONA 85036 /7 GDa^fllñ S MRF526 S E M IC O N D U C TO R S o D T"- •' The RF Line 2 5 0 mW — 1 75 M Hz — 7 .5 V RF TR A N S IS T O R

mmbt2907 2f

Abstract: MMBT2907A
Contextual Info: Tb MOTOROLA SC ÍXSTRS/R F36367254 MOTOROLA SC DE |t,3t,72S4 0DflE03b T | XSTRS/R F 96D 8 2 0 3 6 . i D - MAXIMUM RATINGS MPS2907 Collector-Emitter Voltage VcEO 40 Collector-Base Voltage VcBO Emitter-Base Voltage Ve b o 5.0 Vdc lc 600 mAdc Collector Current — Continuous

mjM6052

Contextual Info: M O T OR O L A SC XSTRS/R F 4bE » fe.3fc.72S4 O C H ^ T O MOTOROLA 4 • f 1 0 T b / z3 ? - 3 3 SEM ICONDUCTOR TECHNICAL DATA M JM 6052 Discrete Military Products (PNP) DM0 M JM 6059 (NPN) m an P N P /N P N S ilic o n C o m p le m e n ta ry P o w e r D a rlin g to n T ra n sisto rs

RF607

Abstract: k 2715
Contextual Info: MOTOROLA SC XSTRS/R Mb E F D b3fe.72S4 GQTMf l Ob MOTOROLA TECHNICAL DATA ¡nOTb 3 5 -C Ä » T • SEM ICO N D U CTO R 4 MRF607 T h e R F L in e 1.75 W — 175 M H z NPN SILICON R F POWER T R AN SISTO R R F POWER T RAN SISTO R NPN SILICON .d e s ig n e d fo r am plifier, frequency m ultiplier, o r oscillato r ap­

CA44-1

Abstract: CA4418 72S4
Contextual Info: motorola SC XSTRS/R F 12E D | b3L.72S4 Ü00ÛS7G 4 | T^4~69-t MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA CA4418 CA4418R CA4422 CA4422R The RF Line 2 6 -C h a n n e l 200 M H z C A T V R e v e rse A m p lifie rs . . designed specifically for use as return amplifiers for mid-split and high-split 2-way

Contextual Info: 12E D I fc.3fc.72S4 Q G flöl.ai 1 | motorola MOTOROLA SC T - 3 V c?1 XSTRS /R F SEMICONDUCTOR TECHNICAL DATA TP302 TP302S The RF Line U H F P o w e r T ra n s is to rs 2 W — 900 MHz UHF POWER T R A N SIST O R S . designed for 5 to 10 Volt large-signal amplifier applications in industrial and com­

Contextual Info: MOTOROLA SC XSTR S/R F 4bE D • b3fc>72S4 00*13403 T ■ TABLE 3 - PLASTIC TO-220 (continued) H OT b *7 ^ 3 3 ' 0 ( Resistive Switching IcCont Amps Max 2 2.5 3 V CE0(SUS) 6 1 12 typ 40 1.4 1 4 50 3* 0.17* 1 12 typ 40 1 4 typ 0.8 typ 1 7.5 min 0.5 4 2

2N4220 MOTOROLA

Abstract: j201 J203 2N4220
Contextual Info: M O T O R O L A SC XSTRS/R F !2E D | b3fc,72S4 Q0âb?13 1 | 1201 thru J203 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S Symbol Valus U nit Drain-Source Voltage Vos 40 Vdc Drain-Gate Voltage Vdg 40 Vdc Gate-Source Voltage Vg s 40 Vdc 50 mA