3N210 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain – source voltage VDS 25 Vdc Drain gate voltage VDG1 VDG2 30 Vdc Gate current IG1R IG1F IG2R IG2F -10 10 -10 10 mAdc Drain current – continuous

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

mpf131

Abstract: MFE131 3N201 3N210 3n207 MPF132 3N201 APPLICATIONS 3N209 3N208 3N204
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} ! 6367255 MOTOROLA SC DE |t.3b7S55 0030045 CD I O D E S / O P T O 3 ^c 3 8 0 42 d T - ?/*• ?. F IE L D -E F F E C T TR A N SISTO R S D ICE continued) DIE NO. 3C201 LINE SOURCE — DFM877 This die provides performance equal to or better than that of

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132

3N209

Abstract: 3N204 3N205 75G60 ae5 uhf 3n210
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC D e | l.3L.72S4 D0flSbl3 □ 9 6D 8 2 6 1 3 C X ST R S/ R F D MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Qate Voltage Vdg 30 Vdc Drain Current Id 50 mA Reverse Gate Current

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A