IRFP340 Search Results

035H

Abstract: IRFPE30 PE30
Contextual Info: PD- 95712 IRFP340PbF • Lead-Free Document Number: 91222 8/2/04 www.vishay.com 1 IRFP340PbF Document Number: 91222 www.vishay.com 2 IRFP340PbF Document Number: 91222 www.vishay.com 3 IRFP340PbF Document Number: 91222 www.vishay.com 4 IRFP340PbF Document Number: 91222

IRFP340

Abstract: TA17424 TB334
Contextual Info: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

Contextual Info: IRFP340A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n = 0 -5 5 Q ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

Contextual Info: N-CHANNEL POWER MOSFETS IRFP340/341 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 0.55 Qg (Max.) (nC) 62 Qgs (nC) 10 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 0.55 Qg (Max.) (nC) 62 Qgs (nC) 10 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole

IRFP340

Abstract: TA17424 TB334 T2T-2
Contextual Info: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

SSH3N70

Abstract: ssh15n55a SSH20N50A SSH8N60 SSH15N60A SSH20N45A ssh20n50 IRFP453 IRFP452 IRFP451
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-3P NCHANNEL Continued BVdss(V) ID(onXA) 400.00 5.00 5.50 8.00 10.00 13.00 15.00 25.00 25.00 1.50 1.00 0.80 0.55 0.40 0.30 0.20 0.25 IRFP332 IRFP330 IRFP342 IRFP340 IRFP352 IRFP350 SSH25N40A SSH25N40 450.00 4.00 4.50 7.00 8.00

Contextual Info: IRFP340A A dvanced Power MOSEET FEATURES B V DSS = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 1 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V

irfp34

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V Qg (Max.) (nC) 0.55 • Isolated Central Mounting Hole 62 Qgs (nC) 10 Qgd (nC) 30 Configuration

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IR LFN

Abstract: mosfet 350v 10A IRFP340R IRFP341R IRFP342R IRFP343R power mosfet 350v to 247 irfip341r N-channel MOSFET to-247 50a
Contextual Info: Rugged Power MOSFETs. IRFP340R, IRFP341R, IRFP342R, IRFP343R File Number 2088 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDs on = 0.550 and 0.800 N -C H A N N E L E N H A N C E M E N T M O D E Feature«: • Single pulse avalanche energy rated

IRFP340

Contextual Info: International S Rectifier PD-9.456C IRFP340 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 400V ^DS on = 0.55Q

Contextual Info: „ • 4305571 QD5451S *j H a r r is flSO ■ HAS _ _ _ _ IRFP340R, IRFP341R IRFP342R, IRFP343R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 1 1 A a n d S .7A , 3 5 0 V a n d 4 0 0 V • r D S (on = 0 . 5 5 f t a n d 0 .8 0 ft

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V Qg (Max.) (nC) 0.55 • Isolated Central Mounting Hole 62 Qgs (nC) 10 Qgd (nC) 30 Configuration

T0204AA

Contextual Info: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150

Contextual Info: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

1RFP360

Abstract: 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP443 IRFP448 IRFP9240 IRFP9242
Contextual Info: THOMSON/ DISTRIBUTOR SflE D • TD2ba73 International t o r Rectifier Cl[]05ñ04 3TD ■ HEXFET Power MOSFETs Plastic insertable Package T O -2 4 7 N-Channel Part Number V q s Drain Source Voltage (Volts) IRFP342 IRFP340 IRFP352 IRFP350 IRFP362 IRFP360 400

IRFP340A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFP340A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

IRFP 450 application

Abstract: IRFP340B
Contextual Info: IRFP340B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

6206 A

Abstract: 9014 transistor specification AN609 IRFP340
Contextual Info: IRFP340_RC, SiHFP340_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

irfs250a

Contextual Info: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A

IRF740

Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V Qg (Max.) (nC) 0.55 • Isolated Central Mounting Hole 62 Qgs (nC) 10 Qgd (nC) 30 Configuration