IRFP34 Search Results

035H

Abstract: IRFPE30 PE30
Contextual Info: PD- 95712 IRFP340PbF • Lead-Free Document Number: 91222 8/2/04 www.vishay.com 1 IRFP340PbF Document Number: 91222 www.vishay.com 2 IRFP340PbF Document Number: 91222 www.vishay.com 3 IRFP340PbF Document Number: 91222 www.vishay.com 4 IRFP340PbF Document Number: 91222

IRFP340

Abstract: TA17424 TB334
Contextual Info: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

Contextual Info: IRFP340A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n = 0 -5 5 Q ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

Contextual Info: N-CHANNEL POWER MOSFETS IRFP340/341 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 0.55 Qg (Max.) (nC) 62 Qgs (nC) 10 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 0.55 Qg (Max.) (nC) 62 Qgs (nC) 10 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole

Contextual Info: PD - 93962A IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

035H

Abstract: IRFPE30
Contextual Info: PD- 95713 IRFP344PbF • Lead-Free www.irf.com 1 8/2/04 IRFP344PbF 2 www.irf.com IRFP344PbF www.irf.com 3 IRFP344PbF 4 www.irf.com IRFP344PbF www.irf.com 5 IRFP344PbF 6 www.irf.com IRFP344PbF www.irf.com 7 IRFP344PbF TO-247AC Package Outline Dimensions are shown in millimeters inches

IRFP340

Abstract: TA17424 TB334 T2T-2
Contextual Info: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

SSH3N70

Abstract: ssh15n55a SSH20N50A SSH8N60 SSH15N60A SSH20N45A ssh20n50 IRFP453 IRFP452 IRFP451
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-3P NCHANNEL Continued BVdss(V) ID(onXA) 400.00 5.00 5.50 8.00 10.00 13.00 15.00 25.00 25.00 1.50 1.00 0.80 0.55 0.40 0.30 0.20 0.25 IRFP332 IRFP330 IRFP342 IRFP340 IRFP352 IRFP350 SSH25N40A SSH25N40 450.00 4.00 4.50 7.00 8.00

Contextual Info: IRFP340A A dvanced Power MOSEET FEATURES B V DSS = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 1 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V

irfp34

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V Qg (Max.) (nC) 0.55 • Isolated Central Mounting Hole 62 Qgs (nC) 10 Qgd (nC) 30 Configuration

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IRFP3415

Contextual Info: PD - 93962A IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

95512

Abstract: 035H IRFPE30 MARKING 22A
Contextual Info: PD - 95512 IRFP3415PbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.042Ω G ID = 43A S Description Fifth Generation HEXFET® Power MOSFETs from

IRFP340

Contextual Info: International S Rectifier PD-9.456C IRFP340 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 400V ^DS on = 0.55Q

Contextual Info: „ • 4305571 QD5451S *j H a r r is flSO ■ HAS _ _ _ _ IRFP340R, IRFP341R IRFP342R, IRFP343R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 1 1 A a n d S .7A , 3 5 0 V a n d 4 0 0 V • r D S (on = 0 . 5 5 f t a n d 0 .8 0 ft

IRFP340A

Contextual Info: IRFP340A A dvanced Power MOSFET FEATURES B V DSS = 400 V ^ D S o n = 0 .5 5 a ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance Id ♦ Improved Gate Charge = 1 1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

Contextual Info: IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V Qg (Max.) (nC) 0.55 • Isolated Central Mounting Hole 62 Qgs (nC) 10 Qgd (nC) 30 Configuration

T0204AA

Contextual Info: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150

Contextual Info: IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V 0.63 Qg (Max.) (nC) 80 Qgs (nC) 12 Qgd (nC) 41 Configuration • Repetitive Avalanche Rated RoHS • Isolated Central Mounting Hole

Contextual Info: IRFP340A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

1RFP360

Abstract: 1rfpc50 IRFP462 IRFPE40 IRFPG42 IRFP9241 IRFP443 IRFP448 IRFP9240 IRFP9242
Contextual Info: THOMSON/ DISTRIBUTOR SflE D • TD2ba73 International t o r Rectifier Cl[]05ñ04 3TD ■ HEXFET Power MOSFETs Plastic insertable Package T O -2 4 7 N-Channel Part Number V q s Drain Source Voltage (Volts) IRFP342 IRFP340 IRFP352 IRFP350 IRFP362 IRFP360 400

IRFP340A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFP340A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V