IRFP440 Search Results

IRFP P CHANNEL MOSFET

Abstract: IRFP440B
Contextual Info: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

HA1190

Contextual Info: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

IRFP440

Abstract: RA3A
Contextual Info: PD-9.457C International ï^R Rectifier IRFP440 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements 500 V V DSS =

Contextual Info: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00

Contextual Info: IRFP440/441 V-CHANNEL MER MOSFETS / FEATURES • Low er R d s i o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input ca p acita nce • Extended safe operating area • Improved high tem perature reliability

Contextual Info: International ja g Rectifier HEXFET Power MOSFET • • • • • • 4 fl5 5 4 S 2 PD-9.457C INR QD1SS2L 334 IRFP440 INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFP440 Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

IRF 100A 500V

Abstract: IRF 250V 100A IRF MOSFET driver IRFP440A irf 729 power mosfet
Contextual Info: IRFP440A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 cn ^DS on = ♦ Rugged Gate Oxide Technology 0 .8 5 Î1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

irfp440

Contextual Info: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 11 Qgd (nC) 30 Configuration • Repetitive Avalanche Rated 0.85 • Isolated Central Mounting Hole

ir 441 c

Abstract: 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442
Contextual Info: IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 /442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Low er R d s ON Im proved ind u ctive ru g g ed n ess F ast sw itch in g tim es R u g ged p olysilicon g a te ce ll structure Low er in p u t ca p a c ita n c e

Contextual Info: PD - 95198 IRFP440PbF • Lead-Free Document Number: 91228 4/27/04 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228

IRFP440R

Abstract: cd3232 IRFP441R IRFP442R IRFP443R ir441
Contextual Info: Rugged Power M OSFETs_ IRFP440R, IRFP441R, IRFP442R, IRFP443R File Number 2089 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0 .8 5 0 and 1 .1 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■

IRFP440

Abstract: IRFP441 PED relay TA17425 bonding TO-247 IRFP442
Contextual Info: i H A R R IRFP440, IRFP441, IRFP442 IRFP443 i s s e m i c o n d u c t o r 7.7 k and 8.8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7.7A and 8.8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFP440

Contextual Info: PD-9.457C International S«r Rectifier IRFP440 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description DATA SHEETS

IRFP440B

Abstract: IRFP 260 M
Contextual Info: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Contextual Info: Advanced IRFP440A P o w e r MOSFEJT FEATURES B ^D S S - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 8.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ V DS = 500V

Contextual Info: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 63 Qgs (nC) 11 Qgd (nC) 30 Configuration Single TO-247AC RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

T0204AA

Contextual Info: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150

Contextual Info: IRFP440 S e m iconductor Data Sheet July 1999 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFP440_RC, SiHFP440_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFP440A Advanced Power MOSFET FEATURES - 500 V ^D S o n = 0 .8 5 Q B ^D S S Rugged G ate O xide T e ch n o lo g y a ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a 00 cn ♦ II ♦ A va la n ch e Rugged T e ch n o lo g y

IRFP440

Abstract: SiHFP440
Contextual Info: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 63 Qgs (nC) 11 Qgd (nC) 30 Configuration Single TO-247AC RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 63 Qgs (nC) 11 Qgd (nC) 30 Configuration Single TO-247AC RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

R027F

Contextual Info: IRFP440A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 500V