0G3B333 Search Results

Contextual Info: IRFS150A A dvanced Power MOSEET FEATURES B VDSS - 100 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 ^ ^ • Lower Input Capacitance lD = 31 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V

Contextual Info: KA3S0880RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,

Contextual Info: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V

Contextual Info: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00

Contextual Info: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V

to 125-10

Abstract: Korea Electronics TRANSISTOR KA350
Contextual Info: KA350 Industrial ELECTRONICS T O -3 P 3-TERMINAL 3A POSITIVE ADJUSTABLE VOLTAGE REGULATORS The KA350 is an adjustable 3-terminal positive voltage regulator capa­ ble of supplying in excess of 3.0 A over an output voltage range of 1 2V to 3 3 V T 0 .2 2 0

SSF4N90AS

Abstract: EL DRIVER 3-STAGE
Contextual Info: SSF4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS= 900V

tvn 610

Abstract: SSF45N20A
Contextual Info: SSF45N20A Advanced Power MOSFET FEATURES BV0SS = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 200V

induction lamp ballast

Abstract: SGH40N60UF igbt for HIGH POWER induction heating 20A igbt
Contextual Info: SGH40N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance APPLICATIONS * * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply Lamp Ballast

Contextual Info: IRFP340A A dvanced Power MOSEET FEATURES B V DSS = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 1 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V

Contextual Info: a PRELIMINARY Advanced Micro Devices Am79C983 Integrated Multiport Repeater 2 IMR2 DISTINCTIVE CHARACTERISTICS • Repeater functionality compliant with IEEE 802.3 Repeater Unit specifications ■ Hardware implementation of Management Informa­ tion Base (M1B) with all of the counters, attributes,

Contextual Info: SSF8N90A Advanced Power MOSFET FEATURES B V DSs = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe OperatingArea ■ Lower Leakage Current :25pA Max. @ VDS= 900V

Contextual Info: SSH17N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V

Contextual Info: SSF25N40A Advanced Power MOSFET FEATURES BV0SS = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ H RoS on = 0 -2 ß Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ VDS= 400V

Contextual Info: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■

Contextual Info: IRFS340A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V ■ Lower RDS(ON) : 0.437 £1 (Typ.)

74142

Abstract: SSF10N80A 115U ssv 620 00401ST
Contextual Info: SSF10N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ V ^ = 800V

74142

Abstract: SSF5N90A
Contextual Info: SSF5N90A Advanced Power MOSFET FEATURES BVDss - 900 V • Avalanche Rugged Technology ^DS on = 2.9 £2 Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V

IRF 850 mosfet

Abstract: IRF 850 250M SSF70N10A
Contextual Info: Advanced Power MOSFET SSF70N10A FEATURES • ■ ■ ■ ■ ■ BVdss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature RDS on — 0.023 Í2

A2757

Abstract: pj 66 diode SSH70N10A 1633 MOSFET
Contextual Info: A d van ced Power MOSFET S S H 7 0 N 1 0 A FEATURES = 100 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 70 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

SSF6N80A

Contextual Info: SSF6N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Ros on = 2 .0 Q ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 piA (Max.) @ VDS = 800V

SSF6N90A

Contextual Info: SSF6N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS= 900V

SGH40N60UFD

Abstract: igbt for induction heating
Contextual Info: SGH40N60UFD IGBT CO-PAK FEATURES TO-3P ^ * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance * CO-PAK, IGBT with FRD :Trr = 42nS (Typ) \\ 1 APPLICATIONS AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls

SSF5N80A

Abstract: PU 4145 pj 89 diode
Contextual Info: SSF5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jiA Max. @ VDS = 800V