TA17424 Search Results

IRFP340

Abstract: TA17424 TB334
Contextual Info: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

IRF340

Abstract: TA17424 to204ae TB334
Contextual Info: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance

IRFP340

Abstract: TA17424 TB334 T2T-2
Contextual Info: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP340

Abstract: IRFP-341 IRFP341
Contextual Info: h a r r is s e m ic o n d u c to r IR F P 3 4 0 , IR F P 3 4 1 , IR F P 3 4 2 , IR F P 3 4 3 11A and 8.7A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 11A and 8.7A, 350V and 400V • Linear Transfer Characteristics

TA17424

Abstract: AN7254 AN7260 RFM7N35 RFM7N40 RFP7N35 RFP7N40 TB334
Contextual Info: RFM7N35, RFM7N40, RFP7N35, RFP7N40 Semiconductor 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A, 350V and 400V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

IRF341

Contextual Info: iH A R R is SEMIC0NDUCT0R IRF340, IRF341 IRF342, IRF343 10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 10A and 8.3A, 400V and 350V • Linear Transfer Characteristics The IRF340, IRF341, IRF342, and IRF343 are N-Channel

Contextual Info: RFM7N35, RFM7N40, RFP7N35, RFP7N40 HARRIS S E M I C O N D U C T O R 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Description Features 7A, 350V and 400V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

irf740 mosfet

Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
Contextual Info: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

gate drive circuit for power MOSFET IRF740

Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
Contextual Info: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: IRFP340 Semiconductor Data Sheet July 1999 • 11 A,400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field

F741

Abstract: rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740
Contextual Info: IRF740, IRF741, IRF742, IRF743 HARRIS a S E M I C O N D U C T O R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

TA17424

Contextual Info: IRFP340 Data Sheet Title FP3 bt A, 0V, 50 m, an- 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

irf740 mosfet

Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
Contextual Info: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of