IRF342 Search Results

IRF341R

Abstract: IRF343 IRF340R IRF342R IRF343R
Contextual Info: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated

IRF340

Abstract: IRF341 IRF342 IRF343 RC9S
Contextual Info: Standard Power MOSFETs- IRF340, IRF341, IRF342, IRF343 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8 A and 10 A, 350 V - 400 V rDscom = 0.55 O and 0.8 O

Contextual Info: IRF342 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)8.3 I(DM) Max. (A) Pulsed I(D)5.2 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

DIODE S4 83A

Abstract: irf340 DIODE M4A IRF34
Contextual Info: HE 0 I MflSS4S5 0 DOT 14 4 Q | Data Sheet No. PD-9.371F INTERNATIONAL R E C T I F I E R - Ì Y - f 3 INTERNATIONAL- RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* IRF340 IRF341 IRF342 IRF343 HEXFET TRANSISTORS 400 VOLT, 0.55 Ohm HEXFET TO-204AA TO-3 Hermetic Package

IRF341

Contextual Info: iH A R R is SEMIC0NDUCT0R IRF340, IRF341 IRF342, IRF343 10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 10A and 8.3A, 400V and 350V • Linear Transfer Characteristics The IRF340, IRF341, IRF342, and IRF343 are N-Channel

Contextual Info: IRF342R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)8.3 I(DM) Max. (A) Pulsed I(D)5.2 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

IRF343

Abstract: IRF342 2147H
Contextual Info: [pì§MiK°[M § FUF IRF342,343 8 AMPERES 400, 350 VOLTS RDS ON = 0.80 Í1 FIELD EFFECT POWER TRANSISTOR T h is series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged­

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

DATA SHEET IRF331

Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i

irf840

Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j

1RF321

Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

irf250

Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200

irf150

Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPW R-6501 H P W R -6502 H P W R -6503 H P W R -6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 T O -3 T O -3 T O -3 T O -3 100 120

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

Contextual Info: • 4 3 0 5 3 7 1 0 0 5 3 ^ 4 3 HARRIS 1T4 ■ HAS IR F340/341/342/343 IRF340R/341R/342R/343R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A • 10A and 8.3A , 4 0 0 V - 3 5 0 V B O T T O M V IE W • rD S on = 0 .5 5 0 and 0 .8 0 H

BUZ24

Abstract: IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK132 2SK133 VN67AF HPWR-6503
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

MTM2N85

Abstract: IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D VN0801D
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o P fi c | I O O I I I P I I I | I I j j CO00 COCO j j ' I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i

irf420

Abstract: IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

VN64GA

Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

irf 111

Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

IRF452

Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 VN5001A VN5002A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

1rf830

Abstract: ibf830 IRF8301 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350