2SK133 Search Results

2SK1333

Contextual Info: FIELD EFFECT TRANSISTO R 2SK1333 SILICON N CHANNEL MOS TYPE w-MOSii HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVER, OC-DC CONVERTER ANS SWITCHING REGURATOR APPLICATIONS. • Low Drain-Source ON Resistance : RDS(ON)=0,i,n (Max.) ID=15A • With Built-in Free Wheeling Diode:

Contextual Info: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source

2SK1331

Contextual Info: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2

Contextual Info: 2SK1334 Silicon N-Channel MOS FET HITACHI Nov. 1 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter Outline

Contextual Info: 2SK1335 L , 2SK1335(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK1336 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Hitachi DSA002757

Contextual Info: 2SK1335 L , 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline

Hitachi DSA002713

Contextual Info: 2SK1337 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Hitachi DSA00279

Contextual Info: 2SK1335 L , 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline

Contextual Info: 2SK1332-2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30Í I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)1.5m

2SK1336

Contextual Info: 3 6 3 -0 2 ^ 2SK1336 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES # Low On-Resistance # High Speed Switching • Low Drive Current 4 V Gate Drive Device • Suitable for Motor Drive, DC-DC Converter, Power — Can be driven from 5 V source

Contextual Info: 2SK1338 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • L ow on-resistarice High speed switching Low drive current N o secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-^nAR

2SK1332

Abstract: 2SK303 ITR01031 ITR01032 ITR01033 ITR01034 ITR01035 ITR01036 ITR01037
Contextual Info: 注文コード No. N 3 1 3 7 2SK1332 No. N3137 83199 2SK1332 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 用途 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。

2SK1334

Abstract: 2SK1334BYTL-E
Contextual Info: 2SK1334 Silicon N Channel MOS FET REJ03G0932-0200 Previous: ADE-208-1271 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter

2SK1338

Contextual Info: HITACHI 2SK1338 - $3.6 i 5 Max SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching 2. Dr pin • • • Low Drive Current No Secondary Breakdown Suitable for Switching Regulator and 3- Source 1. G .lr

Tc-25-t

Abstract: 2SK1330A 2SK1330 VJ640 U0-17 I32O
Contextual Info: Power F-MOS FET 2SK1330, 2SK1330A 2SK1330, 2SK1330A Silicon N-Channel Power F-MOS FET Package Dimensions • Features Unit: mm • Low R EB c,n = 1 . 3 i l (typ.) 5.2max. 15.5max. 6.9min. • High speed switching t(= 120ns (typ.) • Secondary breakdown free

2SK1335

Contextual Info: HITACHI 2SK1335 L , 2SK1335(S) @ îype S IL IC O N N -CH AN N EL M O S Typr FET HIGH S P E E D P O W E R S W IT C H IN G • FEATU RES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown 1. Cate • Suitable for Switching Regulator and

Contextual Info: 2SK1337 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Contextual Info: 2SK1337 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ49 2sk134

Abstract: 2SJ49 2SJ50 2SK134 2SK135 2SJ48 2SJ48 HITACHI 2SK133 2sk133 2Sj48 diode 2U 14
Contextual Info: b l E I 44<ib5DS G D I S Ö I S DAT IHIT4 2SJ48,2SJ49,2SJ50^=5^ SILICON P-CHANNEL MOS FET H I T A C H I / OPTOELECTRONICS ) LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133. 2SK134, 2SK135 • FEATURES • High Power Gain. • Excellent Frequency Response.

Contextual Info: 2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 Previous: ADE-208-1274 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source

2SK1336

Abstract: Hitachi DSA00396
Contextual Info: 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1338

Abstract: DSA003639
Contextual Info: 2SK1338 Silicon N-Channel MOS FET ADE-208-1275 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SK1338

Abstract: DSA003720
Contextual Info: 2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D 1