2SJ48 Search Results

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, I D = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline

ADE-208-512

Abstract: Hitachi 2SJ Hitachi DSA002757
Contextual Info: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS on = 0.5 Ω typ. (at V GS = –4V, I D = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline 2SJ486 Absolute Maximum Ratings (Ta = 25°C)

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance RDS on = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline 2SJ486 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching HITACHI Features • Low on-resistance RDsum> = 0.5 Q typ. at V os= -4V , ID= -100 mA • 2.5V gate drive devices. • Small package (MPAK). Outline M PAK ô s 530 ADE-208-512 A 2nd. Edition 2SJ486

Contextual Info: 2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 Previous: ADE-208-512A Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices.

Hitachi 2SJ

Abstract: Hitachi DSA00279
Contextual Info: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, I D = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline

Hitachi 2SJ

Contextual Info: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching HITACHI ADE-208-501 A 2nd. Edition Features • Low on-resistance ^DS on —0.18 i2 typ. (at V cs = -I0 V , ID = —I A) • Low drive current • High speed switching • 4V gate drive devices.

2SJ486

Abstract: ADE-208-512 Hitachi 2SJ Hitachi DSA00395
Contextual Info: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS on = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK 3 1 D 2 1. Source

2SJ49 2sk134

Abstract: 2SJ49 2SJ50 2SK134 2SK135 2SJ48 2SJ48 HITACHI 2SK133 2sk133 2Sj48 diode 2U 14
Contextual Info: b l E I 44<ib5DS G D I S Ö I S DAT IHIT4 2SJ48,2SJ49,2SJ50^=5^ SILICON P-CHANNEL MOS FET H I T A C H I / OPTOELECTRONICS ) LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133. 2SK134, 2SK135 • FEATURES • High Power Gain. • Excellent Frequency Response.

2SJ483

Abstract: 2SJ483TZ-E PRSS0003DC-A
Contextual Info: 2SJ483 Silicon P Channel MOS FET REJ03G0867-0200 Previous: ADE-208-519 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance

2SJ486ZU-TR-E

Abstract: 2SJ486 2SJ486ZU-TL-E SC-59A
Contextual Info: 2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 Previous: ADE-208-512A Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices.

j485

Abstract: 2SJ485 2SJ48
Contextual Info: Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ485] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Hitachi 2SJ

Abstract: Hitachi DSA002779
Contextual Info: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance RDS on = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline 2SJ484

2SJ49 2sk134

Abstract: 2SJ49 2SJ50 hitachi 2sj50 2SK135 2SJ48 2sk133 2Sj48 2SK134 2Sk135 HITACHI 2SJ50 2SK135
Contextual Info: b lE I 44<ib 5D S G D IS Ö IS DAT IH IT 4 2SJ48,2SJ49,2SJ50^=5^ SILICON P-CHANNEL MOS FET H I T A C H I / OPTOELECTRONICS ) LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133. 2SK134, 2SK135 • FEATURES • High Power Gain. • Excellent Frequency Response.

2SJ48

Contextual Info: 2SJ483 Silicon P Channel MOS FET REJ03G0867-0200 Previous: ADE-208-519 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features • Low on-resistance R DS on = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ483

2SJ484

Abstract: Hitachi 2SJ DSA003642 ADE-208-501A
Contextual Info: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.

WY SC-62 HITACHI

Abstract: 2SJ484 Hitachi DSA00389
Contextual Info: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline

Hitachi 2SJ

Contextual Info: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R dsioh = 0-08Q typ at VGS = -1 0 V, ID = -2.5 A) • 4V gate drive devices. • Large current capacitance ID= -5 A Outline 5 16 ADE-208-519 1st. Edition 2SJ483

2SJ484

Abstract: 2SJ484WYTL-E 2SJ484WYTR-E
Contextual Info: 2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 Previous: ADE-208-501A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching

2SJ486

Abstract: Hitachi 2SJ DSA003642
Contextual Info: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512A Z 2nd. Edition Jul. 1997 Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK

2SJ483

Abstract: Hitachi 2SJ DSA003642
Contextual Info: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 Z 1st. Edition Jun. 1997 Features • Low on-resistance R DS(on) = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A

2sk135

Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
Contextual Info: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.