2SK134 Search Results

2SK1346

Contextual Info: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :

ECG 1277

Abstract: 2SK1340 DSA003639
Contextual Info: 2SK1340 Silicon N-Channel MOS FET ADE-208-1277 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SK1341

Abstract: DSA003639
Contextual Info: 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2sk1346

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1346 Field Effect Transistor In d u s tr ia l A p p l i c a t i o n s U n i t in m m Silicon N Channel MOS Type ti-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s

k1341

Abstract: 2SKI34 k134 2SK1341
Contextual Info: HITACHI 2SK134Ï SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching 1. G »tp • Low Drive Current Î. Drtirt • No Secondary Breakdown 4 ¿06Í02 F lm g e i 3. S our?« Suitable for Switching Regulator and

Hitachi DSA002713

Contextual Info: 2SK1342 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P

Hitachi DSA00279

Abstract: 2sk1341
Contextual Info: 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1341 Absolute Maximum Ratings Ta = 25°C

2SK1341

Contextual Info: 2SK1341 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • L ow on-resistance High speed switching L ow drive current N o secondary breakdown Suitable for switching regulator and DC -D C converter Outline

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK1342

Contextual Info: 2SK1342 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itch in g Features • L ow on-resistance • H igh speed sw itching • L o w drive current • N o secondary breakdown • Suitable for sw itch in g regulator and D C -D C converter

2SK1342

Abstract: Hitachi DSA00395 2A84
Contextual Info: 2SK1342 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2

2SK1341-E

Abstract: 2SK1341 PRSS0004ZE-A SC-65
Contextual Info: 2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 Previous: ADE-208-1278 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK1342 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V)30 I(D) Max. (A)8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)

Hitachi DSA002757

Contextual Info: 2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1340 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SK1340 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

2SJ49 2sk134

Abstract: 2SJ49 2SJ50 2SK134 2SK135 2SJ48 2SJ48 HITACHI 2SK133 2sk133 2Sj48 diode 2U 14
Contextual Info: b l E I 44<ib5DS G D I S Ö I S DAT IHIT4 2SJ48,2SJ49,2SJ50^=5^ SILICON P-CHANNEL MOS FET H I T A C H I / OPTOELECTRONICS ) LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133. 2SK134, 2SK135 • FEATURES • High Power Gain. • Excellent Frequency Response.

2SK1342

Abstract: DSA003639
Contextual Info: 2SK1342 Silicon N-Channel MOS FET ADE-208-1279 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK1341 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

2SK1345

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1345 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType L2-7e-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2sk1348

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1348 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M OSType L2-it-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive

2SK1345

Contextual Info: TOSHIBA 2SK1345 Field Effect Transistor Silicon N Channel MOS Type L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ ^ D S ( O N ) = 0.042£2 (Typ.)

Hitachi DSA002713

Contextual Info: 2SK1341 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P

2SK1345

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1345 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType L2-tc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive

Hitachi DSA002713

Contextual Info: 2SK1340 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P