2SK1332 Search Results

Contextual Info: 2SK1332-2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30Í I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)1.5m

2SK1332

Abstract: 2SK303 ITR01031 ITR01032 ITR01033 ITR01034 ITR01035 ITR01036 ITR01037
Contextual Info: 注文コード No. N 3 1 3 7 2SK1332 No. N3137 83199 2SK1332 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 用途 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。

Contextual Info: O rdering num ber: E N 3 1 3 7 2SK1332 N o .3 1 3 7 N -C hannel Ju n ctio n Silicon FET Low-Frequency General-Purpose Amp Applications A p p lic a tio n s •Ideal for use in v ariable resistors, analog sw itches, low-frequency am plifiers, an d co n stan t-cu rren t

2SK1332

Abstract: 2SK303
Contextual Info: O rdering num ber: EN3137 2SK1332 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications A p p licatio n s - Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. F e a tu re s

2SK1332

Abstract: 2SK303
Contextual Info: Ordering number:EN3137 N-Channel Junction Silicon FET 2SK1332 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1332] 0.425 • Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SK1326

Abstract: 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311 2SK1301
Contextual Info: - 96 - € tt ffl £ j£ m "Æ i f m 1 m \> m, P d/P c h m K fe V* V) * ft * (V) * (A) * (w> Ig s s (max) (A) Vg s (V) % W (Ta=25°C) tï ft (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) gm (min) (typ) V d s (S) (S) (V) Id (A) Id (A) 2SK1301

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

microphone low-noise ti

Abstract: 2SC1570NP 2SK1068 2SK1069 2SK1332 2SK1375 2SK1578 2SK1646 2sc3067 2SK2091
Contextual Info: GaAs MESFETs Absolute maximum ratings Package type Device 2SK1646 . CP4 Applications Vos V Vgs (V) Id (mA) Electrical characteristics (Ta = 25 -C) loss @ Vds Pr (mW) 91 . loss (mA) NF @ Vds • I d lYfsl @ Vds • I ds Vds , (V) |Yfe| (mS) Vos

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta - 25 O RDSfon ID •VGS Applications Voss CV> V(tff ID (A) PD m Teh CC) VGSS(off) (V> RDS (on) m ax(Q) |Yls| @ VDS - ID ID <A) VGS (V) VDS a ID (A)