2SK1578 Search Results

Contextual Info: 2SK1578 Ordering number : EN4178B SANYO Semiconductors DATA SHEET 2SK1578 N-channel Junction FET Electret Condenser Microphone Applications Features • • • • Especially suited for use in electret condenser microphone for audio equipments and telephones.

Contextual Info: 2SK1578 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20Ê I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)800u

2SK1578

Abstract: ITR01782 ITR01783 ITR01784 ITR01785
Contextual Info: 2SK1578 Ordering number : EN4178B SANYO Semiconductors DATA SHEET 2SK1578 N-channel Junction FET Electret Condenser Microphone Applications Features • • • • Especially suited for use in electret condenser microphone for audio equipments and telephones.

2SK1578

Abstract: EN417
Contextual Info: Ordering number:EN4178A N-Channel Junction FET 2SK1578 Capacitor Microphone Applications Features Package Dimensions • Especially suited for use in audio, telephone capacitor microphones. · Excellent voltage characteristics. · Excellent transient characteristics.

Contextual Info: O rdering num ber: EN 4178A 2SK1578 N 0 .4178 A i N-Channel Junction FET SAÊYO Capacitor Microphone Applications F e a tu re s • Especially suited for use in audio, telephone capacitor microphones. •Excellent voltage characteristics. • Excellent transient characteristics.

ITR01784

Abstract: ITR01785 ITR01786 ITR01787 ITR01788 2SK1578 ITR01782 ITR01783
Contextual Info: 2SK1578 注文コード No. N 4 1 7 8 B 三洋半導体データシート 半導体ニューズ No.N4178A をさしかえてください。 2SK1578 N チャネル接合型電界効果トランジスタ コンデンサマイク用 特長 ・音響用 , 電話用コンデンサマイクとして最適である。

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

2SK1560

Abstract: 2SK1557 2SK1558 2SK1576 2SK1555 2SK1559 2SK1571 2SK1574 2SK1556 psw inverter
Contextual Info: - 110 - f S € tfc * ffl M * ss M. £ V* * Hi K 2SK1538 A V * (V) ft * 39 à» m. fë I* P d/P ch (A) (W) I g ss (max) (A) Vg s (V) (min) (max) Vd s (A) (A) (V) (13=25*10) & W (min) (max) Vd s (V) (V) (V) 9m (min) (S) W Id (A) Vd s (V) Id (A) MOS N

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

2SK1578

Abstract: ITC1000
Contextual Info: Ordering num ber: EN 4178A 2SK 1578 N 0 .4 1 7 8 A N -C hannel Ju n c tio n FE T Capacitor Microphone A pplications F e a tu re s • E specially su ited for use in audio, telephone capacitor m icrophones. •E x cellen t voltage ch aracteristics. • E x cellen t tra n s ie n t ch aracteristics.

RJN1167

Abstract: KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E
Contextual Info: Outline Name TFSM ULP-4 VSM TVSM ESM USM TO-92M Size[§§] 0.8¡¿0.6¡¿0.38 1.0¡¿0.6¡¿0.37 1.2¡¿0.8¡¿0.5 1.2¡¿0.8¡¿0.32 1.6¡¿0.85¡¿0.7 2.0¡¿1.25¡¿0.9 4.3¡¿3.2¡¿2.4 Type No. High Gain IDSS §¸ Grade Max. Ratings V Supply (V) ISupply(§ )

2SK1578

Abstract: 25K1578
Contextual Info: Ordering number: EN 4178A _ N-2SK1578 Junction FET Capacitor Microphone Applications 150 B 240 210 C 350 320 D 480 unit V mA mA mW °C °C max unit V -1.5 V 1-iA mS pF pF *o o 100 A 170 -2 0 10 1 100 150 -5 5 to +150 min typ -2 0 -0 .2 -0.6

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta - 25 O RDSfon ID •VGS Applications Voss CV> V(tff ID (A) PD m Teh CC) VGSS(off) (V> RDS (on) m ax(Q) |Yls| @ VDS - ID ID <A) VGS (V) VDS a ID (A)