2SK3376 Search Results

Contextual Info: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current

Contextual Info: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range

2SK3376TK

Contextual Info: 2SK3376TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3376TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.9±0.1 絶対最大定格 Ta=25℃ 1.2±0.05 0.32±0.05 0.45 0.45 0.22±0.05 0.395mm 厚薄型パッケージのため薄型マイクロフォンに最適

2SK3376TK

Abstract: CG transistor 2SK3376
Contextual Info: 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range

2SK3376MFV

Contextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

2SK3376TK

Abstract: 2SK3376
Contextual Info: 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3376TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range

CG transistor

Contextual Info: 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100

2SK3376MFV

Contextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

2SK3376TK

Contextual Info: 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100

2SK3376MFV

Contextual Info: 2SK3376MFV 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3376MFV エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 ・過渡応答性に優れる 1.2±0.05 0.8±0.05 0.32±0.05 ・0.5mm 厚薄型パッケージのため薄型マイクロフォンに最適

2SK3376TV

Contextual Info: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range

Contextual Info: 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100

Contextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

Contextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

2SK3376TV

Contextual Info: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm 0.8±0.1 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125

2SK3376TT

Abstract: H5401 TC58010FT TMPR4925XB fet 1412 BGA256 TPS850 TX49 JFET ecm FET H2
Contextual Info: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年1月号 1 多値技術を採用し大容量化を実現 1ギガビットNAND型フラッシュメモリ TC58010FTTH58020FT NANDシステム・カード担当 045-890-2702 NAND型フラッシュメモリは、大容量・安価という

RJN1167

Abstract: KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E
Contextual Info: Outline Name TFSM ULP-4 VSM TVSM ESM USM TO-92M Size[§§] 0.8¡¿0.6¡¿0.38 1.0¡¿0.6¡¿0.37 1.2¡¿0.8¡¿0.5 1.2¡¿0.8¡¿0.32 1.6¡¿0.85¡¿0.7 2.0¡¿1.25¡¿0.9 4.3¡¿3.2¡¿2.4 Type No. High Gain IDSS §¸ Grade Max. Ratings V Supply (V) ISupply(§ )

5252 0.9V 1.5V led driver

Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT
Contextual Info: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors