2SK77 Search Results

2SK772

Abstract: EN239-2 EN-239-2
Contextual Info: Ordering number:EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions • Variable resistors, analog switches, AF amplifier, constant-current circuit. unit:mm 2034A [2SK772] 4.0 Features 3.0 · Adoption of FBET process.

2SK771

Abstract: 23911
Contextual Info: Ordering num ber: EN 2391 _ 2SK771 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications . Variable resistors, analog switches, AF amp, constant-current circuit Features . Adoption of FBET process . Very small-sized package permitting sets to be made smaller and slimmer

Contextual Info: 2SK772F Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40Í I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)12m

TRANSISTOR FS 2025

Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Contextual Info: SANYO SEMICONDUCTOR ISE D I CORP ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u 2SK775 Ñ -Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C

2SK770

Contextual Info: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage

2SK773

Abstract: tc3783 NEC 701
Contextual Info: NEC N-CHAIMNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK773 The 2SK773 is N-channel MOD Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEATURES • PACKAGE DIMENSIONS in millimeters inches Suitable fo r switching power supplies, actuater controls,

EN2391

Abstract: 2SK771
Contextual Info: Ordering number:EN2391 N-Channel Junction Silicon FET 2SK771 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Variable resistors, analog switches, AF amplifier, constant-current circuit. unit:mm 2050A [2SK771] Features

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

2SK779

Abstract: 2SK794 2sk792 2SK777 2sk718 2SK775 2SK791 k796a 2SK790 2SK786
Contextual Info: Üi f m. s *± ffl € iâ m ü Y % % a . Ÿâ îÈ . K V m * % * (V) (A) s : P d /Pc h ! * * (W) ÍG S S (max) (A) Vg s (V) 6<i (min) (max) Vd s (A) (V) (A) tt ^ (13=25*0 (min) (max) Vd s (V) (V) (V) (min) (S) % ? Id (A) Vd s (V) Id (A) 2SK774 NEC SW

Contextual Info: Ordering number : EN 2 3 9 1 2SK771 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications . Variable resistors, analog switches, AF amp, constant-current circuit Features . Adoption of FBET process . Very small-sized package permitting sets to be made smaller and slimmer

2SK776

Abstract: DS-17 SANYO
Contextual Info: SANYO SEMICONDUCTOR CORP 2SK776 N -Channel .M O S Silicon Field-Effect Transistor 2052A Very High Speed Switching Applications 2560 Features . Low ON resistance, very high-speed switching Absolute Maylira Ratings at Ta=25°C Drain to Source Voltage DSS Gate to Source Voltage

2SK770

Contextual Info: Power F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : R ds (on) = 3 .5 ii (typ.) • High sw itching ra te : ti = 30ns (typ.) • No secondary breakdow n • High breakdow n voltage

2SK773

Abstract: CEE 32A DIODE S45
Contextual Info: 6427525 N E^C ELECTRONICS INC 98D 18922 .4575S5 ÜGIflTEE E D Y - S f 'S S SsSv N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK773 DESCRIPTION The 2SK773 is N-channel MOD Field Effect Power Transistor PACKAGE DIM ENSIONS designed for switching power supplies DC-DC converters.

b1181

Abstract: 2SK775 JIS B1181 TRANSISTOR b1181 TRANSISTOR FS 2025 SILICON TRANSISTOR FS 2025 RNW transistor b1252 TRANSISTOR DDD3710
Contextual Info: SANYO SEMICONDUCTOR ISE D I CORP 2SK775 ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u Ñ-Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C

Contextual Info: 2SK778 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC)

Contextual Info: 6427525 N E C ELECTRONICS IN C 98D 18922 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK773 DESCRIPTION The 2SK773 is N-channel MOD Field E ffect Power Transistor designed for switching power supplies DC-DC converters. FEATURES • • • PACKAGE DIMENSIONS

Contextual Info: 2SK772E Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40Í I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)6.0m

TI801

Abstract: 25HB NEC 346J TC-6139 sl 0565 r 2SK773 T108 T150 MT 6139 A
Contextual Info: 7 s— S 7 • S / — h NEC m * = S F ie ld E f f e c t P o w e r T r a n s i s t o r r i x r x N - ^ - W t ' ^ ' ^ - M j i m O S F X 4 Ü ' , ï f t & X -y -f- > T m 2SK773Ü, N-f -v t w i ^ x > ^ > x y > hffi^"o7 - M 0 S F E T T t > & & & {& < , E «

2SK778

Abstract: B1181 JIS G3141 DDD3710
Contextual Info: SA N Y O SEMICONDUCTOR IS E D CO RP 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C

2SK774

Contextual Info: 6427525 N E C ELECTRONICS INC N-CHANNELMOS FIELD EFFECT POWER TRANSISTOR ~Tfi DESCRIPTION FEATURES D E ] b 4 5 7 S 5 S O D l ñ ^ S fl 2SK774 | The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-OC converter.

2SK772

Abstract: ITR00889 ITR00890 ITR00891 ITR00892 ITR00893 3137NS
Contextual Info: 注文コード No.N 2 3 9 2 A 2SK772 No. N2392A 72199 開発ニューズ No.2392 とさしかえてください。 2SK772 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 用途 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。

2SK771

Abstract: 23911 ITR00880 ITR00881 ITR00882 ITR00883 ITR00884 ITR00885 ITR00886 N2391
Contextual Info: 注文コード No.N 2 3 9 1 2SK771 No. N2391 72199 2SK771 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 用途 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。

2SK774

Contextual Info: 6427525 N E C ELECTRONICS as SaSyir.";- FEATU RES 98D 18925 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ~Tfi D ESCRIPTIO N INC D E | b457S2S OQlfl^BS fl 2SK774 The 2SK774 is N-channel MOS Field Effect Power Transistor designed for switching power supplies OC-OC converter.

K 2056 transistor

Abstract: 2SK777
Contextual Info: SANYO SEMICONDUCTOR Ï I Ë T 1 CORP 711707t 3 ? - 12. r - 2SK777 G0QSMb3 N-Channel M OS Silicon Fieid-Effect Transistor 2056 Very High Speed Switching Applications 2661 Features . Low ON résistance, very high-speed switching Absolute H a i l n Ratings at Ta=25°C