2SK543 Search Results

2SK543

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7*n7Q7b OOObTSO 2SK543 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

2SK543

Abstract: transistor fet 2062
Contextual Info: SANYO SEMICONDUCTOR 2SK543 CORP SSE D 7*n7Q7b OOObTSO 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)

2SK543

Abstract: D2006 ITR00801 ITR00802 D2006 rg 2sk543-3
Contextual Info: 2SK543 注文コード No. N 1 7 9 1 D 三洋半導体データシート 半導体ニューズ No.N1791C とさしかえてください。 2SK543 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である：NF=1.8dB typ f=100MHz 。

2SK565

Abstract: 2SK541 2SK566 2SK569 2SK561 2SK564 2SK549 2SK572 2SK538 2SK544
Contextual Info: - 54 - m e tt ÌÈ. £ m & f y * 1 % K ft X £ P d/ Pc h E ft * V MOS N E 900 DSX ±20 2SK539 SW Reg MOS N 900 DSX ±20 IF J ND 12 D S X -15 S ±20 s a 2SK542 NEC i 2SK543 2SK544 2SK545 - f t 2SK546 LN A , t ' f *i*7 SW MOS N E F M Tuner, V H F RF MOS

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

2SK543

Abstract: J93A W10T 1791-V4
Contextual Info: Ordering n u m b e r:E N 1 7 9 1 C 2SK543 N 0.179 IC N-Channel MOS Silicon FET SANYO i FM Tuner, VHF-Band Amp Applications Features . Low noise. NF=1.8dB typ f=100MHz . High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance, c rss =0.035pF(VDS=10V,f=1MHz)

2SK543

Abstract: ITR00801 ITR00802 ITR00803 ITR00804 ITR00805 ITR00806 ITR00807 ITR00808
Contextual Info: 2SK543 Ordering number : ENN1791D 2SK543 N-Channel Silicon MOSFET FM Tuner, VHF-Band Amplifier Applications Features • • • Low noise : NF=1.8dB typ f=100MHz . High power gain : PG=27dB typ (f=100MHz). Small reverse transfer capacitance : Crss=0.035pF (VDS=10V, f=1MHz).

2SK543

Contextual Info: Ordering number:EN1791C N-Channel Silicon MOSFET 2SK543 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions • Low noise. NF=1.8dB typ f=100MHz . · High power gain. PG=27dB typ (f=100MHz). · Small reverse transfer capacitance. Crss=0.035pF

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

Contextual Info: SA0YO M CP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ole V e i - y h i g h

C4858

Abstract: C4406 C-4401 C3771 C4864 C4402 C4863 c4407 2SC377 C4401
Contextual Info: SAfiYO VERY HIGH-FREQUENCY TRANSISTORS FOR CATV TV TUNER,VTR USE. 1 . C A T V U s O o n v ö ir-t srM C P C4404 C3774 C3778 C3771,C4270, C4856* C3776 C3776 Local OSC , 0 C4401, C4402, C4406 C4407 C3771,C4269, C4270 C43'64, C4365 1st IF Amp C4856*. C4863*

mosfet HF amplifier

Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
Contextual Info: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

mosfet HF amplifier

Abstract: Hf amplifier 200T
Contextual Info: TRANSISTORS High-Frequency Transistors Absolut* maximum rating* tm Application* 2SA1863* SMCP HF amplifier 2SC4918* SMCP HF amplifier 2SA1857 MCP 2SC4400 MCP 2SC4399 Vceo Í »CEO W ! V i 12 15 ifl «fetO (V) (mA) PC (mW) Electrical characteristics (T, = a

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2sk303

Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4

2SA1763

Abstract: A4-DCA015 C4168 A1753 transistor a1839 A1814 2SA1813 DCF015 2SC4413 2SC4694
Contextual Info: M C P Mini Chip Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so sraal1-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V e r y li i g h f r e q u e n c y