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    2SK304 Search Results

    2SK304 Datasheets (40)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK304
    Sanyo Semiconductor General-purpose amplifiers, impedance converters Original PDF 79.81KB 3
    2SK304
    Unknown FET Data Book Scan PDF 92.11KB 2
    2SK304
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 41.12KB 1
    2SK304
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 155.95KB 1
    2SK304
    Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF 488.64KB 3
    2SK304
    Sanyo Semiconductor Small Signal FETs Scan PDF 168.31KB 1
    2SK304
    Sanyo Semiconductor Low-frequency Amp Applications Scan PDF 72.13KB 3
    2SK304
    Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF 88.27KB 1
    2SK3042
    Panasonic N-Channel Power F-MOS FET Original PDF 52.34KB 4
    2SK3042
    Panasonic Silicon N-Channel Power F-MOS FET Original PDF 42.11KB 3
    2SK3042
    Panasonic TRANS MOSFET N-CH 250V 7A 3TO-220D-A1 Original PDF 81.47KB 4
    2SK3043
    Panasonic TRANS MOSFET N-CH 450V 5A 3TO-220D-A1 Original PDF 103.67KB 4
    2SK3043
    Panasonic N-Channel Power F-MOS FET Original PDF 55.49KB 4
    2SK3043
    Panasonic Silicon N-Channel Power F-MOS FET Original PDF 45.24KB 3
    2SK3043
    Panasonic Silicon N-Channel Power F-MOS FET Original PDF 85.18KB 4
    2SK3044
    Panasonic TRANS MOSFET N-CH 450V 7A 3TO-220D-A1 Original PDF 101.23KB 4
    2SK3044
    Panasonic Silicon N-Channel Power F-MOS FET Original PDF 44.49KB 3
    2SK3044
    Panasonic N-Channel Power F-MOS FET Original PDF 54.73KB 4
    2SK3044
    Panasonic Silicon N-Channel Power F-MOS FET Original PDF 84.13KB 4
    2SK3045
    Panasonic TRANS MOSFET N-CH 500V 2.5A 3TO-220D-A1 Original PDF 102.84KB 4
    SF Impression Pixel

    2SK304 Price and Stock

    Select Manufacturer

    onsemi 2SK304E-SPA

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK304E-SPA 1,812 1
    • 1 -
    • 10 -
    • 100 $0.22
    • 1000 $0.19
    • 10000 $0.17
    Buy Now

    RCA 2SK3044

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc 2SK3044 1
    • 1 $1.92
    • 10 $1.92
    • 100 $1.44
    • 1000 $1.25
    • 10000 $1.25
    Buy Now

    2SK304 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK3043

    Contextual Info: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original
    2sk3043100mjo-220d PDF

    2SK3045

    Abstract: DSA003714
    Contextual Info: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2


    Original
    2sk3045o-220ddsa003714 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original
    2002/95/ec2sk3046 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original
    2002/95/ec2sk3045 PDF

    k3047

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original
    2002/95/ec2sk3047k3047 PDF

    2SK304

    Contextual Info: Ordering n u m b e r:E N 850E No,850E II 2SK304 N-Channel Junction Silicon FET Low-Frequency Amp Applications Applications • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators. Absolute Maximum Ratings atTa = 25°C


    OCR Scan
    en850e2sk304-10ha PDF

    5a diode

    Abstract: 2SK3042
    Contextual Info: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 ■ Applications


    Original
    2sk3042o-220d5a diode PDF

    2SK3042

    Contextual Info: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm 9.9±0.3 3.0±0.5 15.0±0.5


    Original
    2sk3042o-220d-a1 PDF

    k3047

    Abstract: 2SK3047
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ


    Original
    2002/95/ec2sk3047k3047 PDF

    2SK3045

    Abstract: 15a diode
    Contextual Info: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original
    2sk3045o-220d-a115a diode PDF

    2SK3048

    Contextual Info: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original
    2sk3048o-220d-a1 PDF

    2SK3042

    Abstract: drain
    Contextual Info: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original
    2sk3042o-220d-a1drain PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed


    Original
    2002/95/ec2sk3044 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original
    2002/95/ec2sk3047o-220d-a1k3047 PDF

    2SK3045

    Abstract: K3045
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ


    Original
    2002/95/ec2sk3045k3045 PDF

    K3046

    Abstract: 2SK3046
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ


    Original
    2002/95/ec2sk3046k3046 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original
    2002/95/ec2sk3046 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original
    2002/95/ec2sk3045o-220d-a1k3045 PDF

    2SK3048

    Contextual Info: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay


    Original
    2sk3048o-220d PDF

    2SK3047

    Contextual Info: Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original
    2sk3047o-220d PDF

    2SK3044

    Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original
    2sk3044130mjo-220d-a1 PDF

    k3044

    Abstract: 2SK3044
    Contextual Info: Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown


    Original
    2sk3044k3044 PDF

    2SK3049

    Contextual Info: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original
    2sk3049o-220d-a1 PDF

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original
    2sk3012sk3022sk3032sk304+152sk3082sk3092sk3102sk3112sk3122sk3132sk40052sk3852sk3322sk3392sk4002sk3362sk3862sk3172sk354 PDF