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    Vishay Intertechnologies CRCW1206130MJPEAHR

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    Vishay Intertechnologies CRCW1206130MJPTAHR

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    Vishay Intertechnologies CRCW0603130MJPEAHR

    D11/CRCW0603-HR 500 130M 5% ET1 e3 - Tape and Reel (Alt: CRCW0603130MJPEAHR)
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    Vishay Intertechnologies CRCW0805130MJPEAHR

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    TT Electronics plc HVC1206-130MJT3

    Thick Film Resistors - SMD 1206 130 Mohms 5% 100 PPM
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    130MJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK2124

    Abstract: DSA003718
    Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original
    2sk2124130mjo-220edsa003718 PDF

    2SK2124

    Contextual Info: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay


    OCR Scan
    2sk2124130mj-220e PDF

    2SK2127

    Contextual Info: Panasonic Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 130mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 60ns No secondary breakdown ■ Applications


    OCR Scan
    2sk2127130mj PDF

    2SK3044

    Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


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    2sk3044130mjo-220d-a1 PDF

    2SK2127

    Contextual Info: 2SK2127 Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


    Original
    2sk2127130mjo-220e PDF

    2SK2127

    Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original
    2sk2127130mj PDF

    2SK3046

    Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original
    2sk3046130mjo-220d PDF

    2SK3046

    Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original
    2sk3046130mjo-220d PDF

    2SK2124

    Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original
    2sk2124130mjo-220e PDF

    2sk2127

    Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original
    2sk2127130mj PDF

    2sk2127

    Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original
    2sk2127130mjo-220e PDF

    2SK3044

    Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original
    2sk3044130mjo-220d PDF

    Contextual Info: 2SK2124 Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications


    Original
    2sk2124130mjo-220e PDF

    2SK2124

    Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na


    Original
    2sk2124130mj PDF

    2SK3044

    Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original
    2sk3044130mjo-220d PDF

    BTS5242L

    Abstract: BTS 5242-2L 5242-2l
    Contextual Info: Target Data Sheet, V1.3, Nov 2006 BTS 5242-2L Smart High-Side Power Switch PROFET Tw o Channel s, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5242-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    5242-2lbts5242lbts 5242-2l PDF

    BTS5441

    Abstract: INFINEON PART MARKING bts BTS5441G
    Contextual Info: Target Data Sheet, V1.3, Nov 2006 BTS 5441-2G Smart High-Side Power Switch PROFET Four Channels, 25 m Ω Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5441-2G 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original
    5441-2gbts5441infineon part marking btsbts5441g PDF

    SMD transistor package code V12

    Abstract: BTS5246L
    Contextual Info: Target Data Sheet, V1.2, Aug 2006 B T S 52 4 6 - 2 L Smart High-Side Power Switch PROFET Two Channels, 19 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5246-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original
    5246-2lsmd transistor package code v12bts5246l PDF

    BTS5241G

    Abstract: 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43
    Contextual Info: Target Data Sheet, V1.3, Nov 2006 BTS 5241-2G Smart High-Side Power Switch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5241-2G 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original
    5241-2gbts5241gbts5241infineon bts 3110 n+1pg-dso-20-43 PDF

    transistor 315

    Abstract: 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12
    Contextual Info: Target Data Sheet, V1.2, August 2006 BTS 5242-2L Sm art Hi gh-Si de Pow er S witch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5242-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original
    5242-2ltransistor 3152l transistor smd marking codebts 5242-2l+2transistor smd marking code 2lsmd transistor package code v12 PDF

    bts5241l

    Abstract: bts5241
    Contextual Info: Target Data Sheet, V1.3, Nov 2006 BTS 5241-2L Smart High-Side Power Switch PROFET Two Channels, 25 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5241-2L 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


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    5241-2lbts5241lbts5241 PDF

    BTS5246L

    Abstract: 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52
    Contextual Info: Target Data Sheet, V1.2, Aug 2006 BTS 5246-2L Smart High-Side Power Switch PROFET Two Channels, 19 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5246-2L Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


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    5246-2lbts5246l2l transistor smd marking codebts5246-2l+6smd transistor package code v12pg-dso-12-9smd transistor 2ltransistor smd marking code 2lsmd code v12bts52 PDF