130MJ Search Results
130MJ Price and Stock
Vishay Intertechnologies CRCW1206130MJPEAHR- Tape and Reel (Alt: CRCW1206130MJPEAHR) |
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CRCW1206130MJPEAHR | Tape & Reel | 12 Weeks | 5,000 |
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Vishay Intertechnologies CRCW1206130MJPTAHR- Tape and Reel (Alt: CRCW1206130MJPTAHR) |
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CRCW1206130MJPTAHR | Tape & Reel | 14 Weeks | 5,000 |
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Vishay Intertechnologies CRCW0603130MJPEAHRD11/CRCW0603-HR 500 130M 5% ET1 e3 - Tape and Reel (Alt: CRCW0603130MJPEAHR) |
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CRCW0603130MJPEAHR | Tape & Reel | 12 Weeks | 5,000 |
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CRCW0603130MJPEAHR |
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Vishay Intertechnologies CRCW0805130MJPEAHR- Tape and Reel (Alt: CRCW0805130MJPEAHR) |
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CRCW0805130MJPEAHR | Tape & Reel | 12 Weeks | 5,000 |
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CRCW0805130MJPEAHR |
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TT Electronics plc HVC1206-130MJT3Thick Film Resistors - SMD 1206 130 Mohms 5% 100 PPM |
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HVC1206-130MJT3 |
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130MJ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK2124
Abstract: DSA003718
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Original |
2sk2124130mjo-220edsa003718 | |
2SK2124Contextual Info: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay |
OCR Scan |
2sk2124130mj-220e | |
2SK2127Contextual Info: Panasonic Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 130mJ V<;s s = ± 3 0 V guaranteed High-speed switching : t|= 60ns No secondary breakdown ■ Applications |
OCR Scan |
2sk2127130mj | |
2SK3044Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C |
Original |
2sk3044130mjo-220d-a1 | |
2SK2127Contextual Info: 2SK2127 Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications |
Original |
2sk2127130mjo-220e | |
2SK2127Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na |
Original |
2sk2127130mj | |
2SK3046Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 |
Original |
2sk3046130mjo-220d | |
2SK3046Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 |
Original |
2sk3046130mjo-220d | |
2SK2124Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm |
Original |
2sk2124130mjo-220e | |
2sk2127Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm |
Original |
2sk2127130mj | |
2sk2127Contextual Info: Power F-MOS FETs 2SK2127 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 |
Original |
2sk2127130mjo-220e | |
2SK3044Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 |
Original |
2sk3044130mjo-220d | |
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Contextual Info: 2SK2124 Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 130mJ 4.6±0.2 ● V GSS=±30V guaranteed secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications |
Original |
2sk2124130mjo-220e | |
2SK2124Contextual Info: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 M Di ain sc te on na |
Original |
2sk2124130mj | |
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2SK3044Contextual Info: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 |
Original |
2sk3044130mjo-220d | |
BTS5242L
Abstract: BTS 5242-2L 5242-2l
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Original |
5242-2lbts5242lbts 5242-2l | |
BTS5441
Abstract: INFINEON PART MARKING bts BTS5441G
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Original |
5441-2gbts5441infineon part marking btsbts5441g | |
SMD transistor package code V12
Abstract: BTS5246L
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Original |
5246-2lsmd transistor package code v12bts5246l | |
BTS5241G
Abstract: 5241-2G bts5241 Infineon BTS 3110 N PG-DSO-20-43
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Original |
5241-2gbts5241gbts5241infineon bts 3110 n+1 | |
transistor 315
Abstract: 2l TRANSISTOR SMD MARKING CODE BTS 5242-2L TRANSISTOR SMD MARKING CODE 2l SMD transistor package code V12
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Original |
5242-2ltransistor 3152l transistor smd marking codebts 5242-2l+2 | |
bts5241l
Abstract: bts5241
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Original |
5241-2lbts5241lbts5241 | |
BTS5246L
Abstract: 2l TRANSISTOR SMD MARKING CODE BTS5246-2L SMD transistor package code V12 5246-2L PG-DSO-12-9 smd transistor 2l TRANSISTOR SMD MARKING CODE 2l SMD code V12 bts52
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Original |
5246-2lbts5246l2l transistor smd marking codebts5246-2l+6 | |