2SK317 Search Results

2SK317 Datasheets (24)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK317	Hitachi Semiconductor	Silicon N-Channel MOS FET, HF / VHF Power Amplifier	Scan	PDF	74.67KB	2
2SK317	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	127.11KB	1
2SK317	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	42.68KB	1
2SK317	Unknown	FET Data Book	Scan	PDF	92.11KB	2
2SK317	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	81.62KB	1
2SK317	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	78KB	1
2SK317	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	59.81KB	1
2SK3174A	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF	84.12KB	8
2SK3174A	Renesas Technology	Silicon N Channel MOS FET UHF Power Amplifier	Original	PDF	106.24KB	10
2SK3175A	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF	81.47KB	8
2SK3175A	Renesas Technology	Silicon N Channel MOS FET UHF Power Amplifier	Original	PDF	101.72KB	10
2SK3176	Toshiba		Original	PDF	44.05KB	9
2SK3176	Toshiba	FETs - Nch 150V	Original	PDF	160.59KB	6
2SK3176	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

2SK3176	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3176	Toshiba	Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, switching regulator, DC-DC converter & motor drive applications	Scan	PDF	298.35KB	5
2SK3176(F)	Toshiba	2SK3176 - MOSFET N-CH 200V 30A 2-16C1B	Original	PDF	179.31KB	6
2SK3176(F)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 30A TO-3PN	Original	PDF		2
2SK3176PBF	Toshiba	2SK3176 - TRANSISTOR 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power	Original	PDF	179.31KB	6
2SK3177	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF	53.99KB	9

2SK317 Price and Stock

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Toshiba America Electronic Components 2SK3176(F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK3176(F)		3,032			1 $9.52 10 $9.52 100 $9.52 1000 $4.76 10000 $4.76	Buy Now
Renesas Electronics Corporation 2SK3177-E Stock
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Flip Electronics	2SK3177-E		1,523			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK317 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK3176 Abstract: SC-65 Contextual Info: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm	OCR Scan	2sk3176 sc-65	PDF
Contextual Info: T O SH IB A 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR m— GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE t # • m t m m U H F-SH F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC	OCR Scan	2sk3179 admitt510	PDF
k3176 Abstract: 2SK3176 SC-65 25c512 Contextual Info: 2SK3176 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV 2SK3176 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 30 S (標準)	Original	2sk3176 2-16c1b sc-65 k3176 +125c512	PDF
2SK3176 Abstract: SC-65 Contextual Info: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 76 SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm j 1 • Low Drain-Source ON Resistance • High Forward Transfer Admittance : \|Yfs\| = 30 S (Typ.)	OCR Scan	2sk3176 sc-65	PDF
2SK3175A Abstract: rfpak DSA003640 Hitachi DSA003640 Contextual Info: 2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz) • Compact package Outline RFPAK-G	Original	2sk3175a ade-208-1452 860mhz d-85622 +4d-85619 rfpak dsa003640 hitachi dsa003640	PDF
Contextual Info: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 M A X .	OCR Scan	2sk3176	PDF
2SK317 Abstract: HF VHF power amplifier 2sk317 hitachi k317 Contextual Info: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.	OCR Scan	2sk317 100mhz i75mh hf vhf power amplifier +22sk317 hitachi k317	PDF
Contextual Info: T O S H IB A 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 Í Q MAY	OCR Scan	2sk3176	PDF
Contextual Info: TO SH IBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS	OCR Scan	2sk3176	PDF
2sk3174 Abstract: 2SK3174A DSA003640 Contextual Info: 2SK3174A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1451 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz) • Compact package Suitable for push - pull circuit	Original	2sk3174a ade-208-1451 860mhz d-85622 +3d-85619 2sk3174 dsa003640	PDF
2SK3177 Abstract: Hitachi DSA00276 Contextual Info: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching ADE-208-745A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =90mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2	Original	2sk3177 ade-208-745a 220fm d-85622 +1hitachi dsa00276	PDF
2sk4005 Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354 Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321	Original	2sk301 2sk302 2sk303 2sk304 +152sk308 2sk309 2sk310 2sk311 2sk312 2sk313 2sk4005 2sk385 2sk332 2sk339 2sk400 2sk336 2sk386 2sk317 2sk354	PDF
512ID Abstract: 2SK3176 SC-65 k3176 Contextual Info: 2SK3176 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV 2SK3176 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 30 S (標準)	Original	2sk3176 2-16c1b sc-65 512id +1k3176	PDF
k3176 Abstract: 2SK3176 SC-65 Contextual Info: 2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS V 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 30 S (typ.)	Original	2sk3176 k3176 sc-65	PDF

2SK317 Abstract: zenner 10v 2sk317 hitachi Contextual Info: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.	OCR Scan	2sk317 d013q3m zenner 10v 2sk317 hitachi	PDF
313-105 Abstract: 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406 Contextual Info: TOSHIBA 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K 3 1 79 UHF-SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Gate-Drain Voltage	OCR Scan	2sk3179 sym57 313-105 et 8211 +30737 8178 0.514 740 1025 5688 el 7406	PDF
2SK3176 Abstract: SC-65 Contextual Info: T O S H IB A 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •	OCR Scan	2sk3176 sc-65	PDF
2SK3177 Abstract: Hitachi DSA00239 Contextual Info: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching ADE-208-745A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM	Original	2sk3177 ade-208-745a 220fm hitachi dsa00239	PDF
k3176 Abstract: 2SK3176 SC-65 Contextual Info: 2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS V 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 30 S (typ.)	Original	2sk3176 k3176 sc-65	PDF
2SK3177 Abstract: 2SK3177-E PRSS0003AD-A 2SK317 Contextual Info: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 Previous: ADE-208-745A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline	Original	2sk3177 rej03g1089-0300 ade-208-745a prss0003ad-a +3o-220fm 2sk3177-e 2sk317	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	5252 f 1009 4-pin tpc 8028 marking s3h sot363 tk8a50d equivalent +6tk6a65d equivalent 2sk4112 tpca8030-h toshiba laptop charging circuit diagram tk80a08k3 tpca*8025	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibilixp08081 xp08546 xp0a554 xp0d873 +13xp0d874 xp0d875 xp0e554 2sc5929 mn1280 transistor 2sc5929 3sk129 3sk97 2sc5928 2pg009 2sc5929 equivalent 2sk4000 2sd965 transistor replacement guide	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	bce0017b 2sk2056 2sk1603 2sk1603 datasheet +7toshiba "ultra high speed" diode 1a transistor 2sk1603 2sk3561 equivalent 2sk2915 equivalent 1045y 2sk3569 equivalent 2sk1078	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	stp7nb40 stt3pf30l std20ne03l stp60ne03l-12 +14stp60ne03l-10 stp40nf03l stp80ne03l-06 sts4dpf30l fqp60n06 spb32n03l rfp60n06 ssh6n80 fqp50n10 fsd6680 stp55nf06 and its equivalent sfp70n03 hgtg*n60a4d irf630 irf640	PDF

2SK317 Search Results

2SK317 Datasheets (24)

2SK317 Price and Stock

Toshiba America Electronic Components 2SK3176(F)

Renesas Electronics Corporation 2SK3177-E

2SK317 Datasheets Context Search

2SK3176

k3176

2SK3176

2SK3175A

2SK317

2sk3174

2SK3177

2sk4005

512ID

k3176

2SK317

313-105

2SK3176

2SK3177

k3176

2SK3177

5252 F 1009 4-pin

2sc5929

2SK2056

fqp60n06