2SK3175A
Abstract: rfpak DSA003640 Hitachi DSA003640
Contextual Info: 2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz) • Compact package Outline RFPAK-G
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2sk317
Abstract: rfpak 2SK3175A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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hd49323aha12134aha12141nha12155n+16ha12163ha12167fha12173ha12179fha12181fha12187flvc16244bc2402sk3174cbt1g125lv2gt14ahc32 hitachiha13557atransistor 2sc1162h8 hitachi programming manual30204sp
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3sk3093sk3173sk318bb101c+16bb102cbb301cbb302cbb304cbb305cbb501c2sc 85506020v46030v4hitachi 08122b2sc 8050hitachi 08123btransistor h945h945transistor c 6030v42sk3545
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