220FM Search Results

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R6020ENX

Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device

Contextual Info: R5016ANX Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.27Ω ID ±16A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R5009FNX

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5009FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

2SB1103

Abstract: 2SB1390 DSA003644
Contextual Info: 2SB1390 Silicon PNP Triple Diffused ADE-208-870 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item

2SB1391

Abstract: 2SB791 DSA003644
Contextual Info: 2SB1391 Silicon PNP Triple Diffused ADE-208-871 Z 1st. Edition Sep. 2000 Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SB1399

Abstract: 2SB955 DSA003644
Contextual Info: 2SB1399 Silicon PNP Triple Diffused ADE-208-873 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25°C) Item

OP103

Abstract: 2SD2106 DSA003645
Contextual Info: 2SD2106 Silicon NPN Epitaxial ADE-208-922 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 3 kΩ (Typ) 200 Ω (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Contextual Info: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 65 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-220FM Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SB1403 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 O 1 1. Base 2. Collector 3. Emitter O- C M M t- ^VW 3.0 k£2 Typ 180 £2 (Typ) Ö l' 2SB1403 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Contextual Info: 2SD2105 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. Collector 3. Emitter 1^ 1^ 1.5 kQ. Typ [1 130 Q. (Typ) ¿ 3 ¡t'D 2SD2105 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating

2sd2102

Abstract: 2SD1558 Hitachi DSA00164
Contextual Info: 2SD2102 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2.6 kΩ Typ 3 2SD2102 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 60

Hitachi DSA001650

Contextual Info: 2SB1401 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 55 kΩ Typ 3 2SB1401 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –300

Hitachi DSA001650

Contextual Info: 2SD2113 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 4 kΩ Typ 300 Ω (Typ) 3 2SD2113 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

2SD2101

Contextual Info: 2SD2101 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2 Î 1 Base 2 Collector 3 Emitter 3 ki3 Typ 1 50 Í2 (Typ) ¿ 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

Contextual Info: 2SD2108 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2108 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 80 V Collector to em itter voltage V cE O 80 V Emitter to base voltage

Contextual Info: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2111 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage

Contextual Info: 2SB1392 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Em itter Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit C o lle cto r to base vo lta g e ^G B O -7 0 V C o lle cto r to e m itte r vo lta g e

Contextual Info: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2SD2112 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage

2SD2103

Contextual Info: 2SD2103 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2103 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 60 V Collector to em itter voltage V cE O 60 V Emitter to base voltage