2SD2112 Search Results

Contextual Info: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2SD2112 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage

2SD2103

Abstract: 2SD2096 TO220FM 2SD2102 2sd209 2SD2109 STC 100u 2SD2091 SC-63 2SD2093
Contextual Info: - 280 - Ta=25^,*EPÍáTc=25'C í± « 2SD2091 2SD2092 2SD2093 2SD2094 2SD2096 2SD2097 2SD2098 2SD2099 2SD2100 2SD2101 2SD2102 2SD2103 2SD2104 2SD2Ì05 2SD2106 2SD2107 2SD2108 2SD2109 2SD2110 2SD2111 2SD2112 2SD2113 2SD2114K 2SD2115L/S 2SD2116 2SD2117 2SD2119

Contextual Info: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 2.6 kQ. Typ [1 160 Q. (Typ) ¿ 3 ¡t'D 2SD2112 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating

2SD1606

Abstract: 2SD2112 Hitachi DSA0015
Contextual Info: 2SD2112 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 2.6 kΩ Typ 160 Ω (Typ) 3 2SD2112 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

2SD2112

Contextual Info: 2SD2112 Thermal resistance θj-c °C/W Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 Time t (s) 10 100 1000

Contextual Info: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SD2112 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O 1 20 V VCEo 1 20 V V EB0 7 V 6 A 12 A 2 W Collector to em itter voltage

Contextual Info: ¡ H ITACH I 2SD2112-Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VcEO 120 V Emitter to base voltage VESO 7 V Collector current

2sc3667

Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00

NEC 2SD1564

Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2SC4488 2SD1558
Contextual Info: - 256 - M £ Type No. M % a Manuf. SANYO 2 TOSHIBA NEC 2SD 1986 □ —A 2SD1190 2SD686 2SD1564 2SD 1987 □—A 2SD1825 2SD1414 2SD1595 2SD 1988 □ —A ÍZ. HITACHI 2SD1558 * ± FU JITSU fé T MATSUSHITA □ —A T 2SD 1991 r fé T 2SD1991A 2SD 1992 y

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

C1959

Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
Contextual Info: - sa s T y p e Ho. tt £ Manu f. = X SANYO S TOSHIBA n B NEC B ÍL HITACH I s ± a F U JIT S U fé T MATSUSHITA Z * M ITSUBISHI □ 267 — A ROHM 2SD 2403 B S 2SD1624 2SC4541 2SO 2404 fé T 2SD2426 2SD1509 2SD 2405 fé T 2SD2251 2SD1433 2SO 2406 ^ Si 2SD2202

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173