2SC4541 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 o POWER AMPLIFIER APPLICATIONS o POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VcE(sat)=-0.5V(Max.) (Ic=1.5A) • High Speed Switching Time: t stg=0.5MS (Typ.) • Small Flat Package • Pc=l~2W (Mounted on Ceramic Sabstrate)

Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)

2SA1736

Abstract: 2SC4541
Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)

2SA1736

Abstract: 2SC4541
Contextual Info: TOSHIBA 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)

0100MS

Abstract: 2SC4541 2SA1736
Contextual Info: 2SC4541 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4541 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1.5 A)

Contextual Info: SMD Type Product specification 2SA1736 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta = 25

2SA1736

Abstract: 2SC4541
Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 s (typ.)

2SA1736

Abstract: 2SC4541
Contextual Info: 2SC4541 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4541 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1.5 A)

D1647

Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
Contextual Info: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368

smd marking LD

Abstract: ld smd transistor 2SA1736 2SA1736 EQUIVALENT smd transistor 2A smd transistor MARKING 2A 2SC4541 smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SA1736 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541

2SA1736

Abstract: 2SC4541
Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 s (typ.)

2SC4541

Abstract: 2SA1736
Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) · High speed switching time: tstg = 0.5 µs (typ.)

smd marking KD

Abstract: kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SC4541 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1736

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4541 U n it in mm o POWER AMPLIFIER APPLICATIONS ° POWER SWITCHING APPLICATIONS • Low S a t u r a t i o n V o lta g e : V c E s a t = -0 .5 V (M a x .) (Ic= 1 .5 A ) • High Speed S w itc h in g Time: t S(;g=0.5(JS (T y p .)

2SA1736

Abstract: 2SC4541
Contextual Info: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)

2SC4541

Abstract: 2SA1736 transistor marking 7D
Contextual Info: T O S H IB A 2SC4541 2SC4541 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)

Contextual Info: TO SH IB A 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS Low Saturation Voltage : q e (s a t ) = 0-5V (Max.) (IC = 1-5A) High Speed Switching Time : tg tg = 0.5//S (Typ.)

2SA1736

Abstract: 2SC4541
Contextual Info: TOSHIBA 2SC4541 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

2SA1736

Abstract: 2SC4541 marking HE M2X marking
Contextual Info: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —j- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package

Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)