2SA1736 Search Results

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)

2SA1736

Abstract: 2SC4541 marking HE M2X marking
Contextual Info: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —j- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package

Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1736 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 1.7 MAX. Low Saturation Voltage : V c e sat =-0.5A(Max.) (IC=-1.5A) High Speed Switching: tstg=0-2^s (Typ.) Small Flat Package Pc=l~2W (Mounted on Ceramic Sabstrate)

2SA1736

Abstract: 2SC4541
Contextual Info: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —J- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)

Contextual Info: T O SH IB A 2SA1736 2 S A 1 736 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SW ITCHING APPLICATIONS 1 .6 M A X . — J- - 4 .6 M A X . 1 .7 M A X . • • • • • Low Saturation Voltage: V^ e (sat)= —0.5V(Max.) (1^= —1.5A)

Contextual Info: SMD Type Product specification 2SA1736 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541 Absolute Maximum Ratings Ta = 25

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)

Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) · High speed switching time: tstg = 0.2 µs (typ.)

Contextual Info: TOSHIBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 17 3 6 PO W ER AM PLIFIER APPLICATIONS U nit in mm PO W ER SWITCHING APPLICATIONS l.GM A X. 4.6MAX. 1.7MAX. • Low Saturation Voltage: Vq e (sat)= —0.5V(Max.) (1^= —1.5A)

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA 2 S A 1 736 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 1.6MAX —j- 4.6MAX. 1.7MAX. Low Saturation Voltage: V q ^ (sat)= —0.5V (Max.) (Iq = —1.5A)

Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)

smd marking KD

Abstract: kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SC4541 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1736

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1736 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1.5 A)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.)

2SA1148

Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
Contextual Info: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1736 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1.5 A)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 o POWER AMPLIFIER APPLICATIONS o POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VcE(sat)=-0.5V(Max.) (Ic=1.5A) • High Speed Switching Time: t stg=0.5MS (Typ.) • Small Flat Package • Pc=l~2W (Mounted on Ceramic Sabstrate)

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR