1SS181 Search Results

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

4558 dd

Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
Contextual Info: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300

Switching Diodes

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS181 Features x x x • • • 150mW High Speed Switching Diodes 80 Volt Low Forward Voltage Low Leakage Current

Contextual Info: SMD Type Product specification 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns Typ. 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 • Features

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

1SS181

Abstract: 100MAS
Contextual Info: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.92V (Typ.) l Fast reverse recovery time : trr = 1.6ns (Typ.) l Small total capacitance : CT = 2.2pF (Typ.)

Contextual Info: SOT-23 Plastic-Encapsulate Diodes 1SS181 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF : Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 95 0. 4 2. 9 2. 4 1. 3 0. 95 150 1. 9 PD :

1SS181

Contextual Info: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (Typ.) z Fast reverse recovery time : trr = 1.6ns (Typ.) z Small total capacitance : CT = 2.2pF (Typ.)

marking CODE A3

Abstract: 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
Contextual Info: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features x Small package x Low forward voltage x Fast reverse recovery time x Small total capacitance 1. CATHODE 2. CATHODE 3. ANODE Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application

1ss181

Contextual Info: 1SS181 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  Dual Diode Common Anode   Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS181 Features • • • 150mW High Speed Switching Diodes 80 Volt Low Forward Voltage Low Leakage Current Surface Mount SOT-23 Package

DIODE A3

Abstract: 1SS181
Contextual Info: Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulated Diodes 1SS181 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF : Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 95 0. 4

Contextual Info: TOSHIBA 1SS181 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1S S 18 1 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.5 • Small Package : SC-59 • Low Forward Voltage : Vjr 3 = 0.92V (Typ.) • Fast Reverse RecoveryTime : • Small Total Capacitance

1SS181

Contextual Info: RECTRON 1SS181 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

1SS181

Contextual Info: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (Typ.) z Fast reverse recovery time : trr = 1.6ns (Typ.) z Small total capacitance : CT = 2.2pF (Typ.)

1SS181

Abstract: diode a3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF : Reverse Voltage 80 V VR: Operating and storage junction temperature range

a1 sot-23

Abstract: "MARKING CODE A1" 1SS181 marking codes transistors a1 sot-23 marking code A1 marking 724 diode sot-23 marking code A1 SOT 23
Contextual Info: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: A1 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings Ta = 25 OC

1SS181

Contextual Info: 1SS181 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS181 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順電圧特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm

Contextual Info: TO SHIBA 1SS181 1 S S 1 81 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.92V (Typ.)

1SS181

Abstract: 100MAS 961001EAA2
Contextual Info: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.)

1SS181

Contextual Info: TOSHIBA 1SS181 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 81 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 2.5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : V f 3 = 0.92V (Typ.)

1SS181

Abstract: J-STD-020D
Contextual Info: 1SS181 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic

1SS181

Abstract: robotics 100MAS
Contextual Info: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS181 Features • • • • 150mW High Speed Switching Diodes 80 Volt Low Forward Voltage Low Leakage Current