1S1585 Search Results

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

1s1588

Abstract: Diode 1S1588 1S1587 1S1536 1s85
Contextual Info: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~ b7 Dlf| ^ 7 2 5 0 DISCRETE/OPTO _ 67C_09299_. 1S1585—1S1588 Silicon Epitaxial' Planar Type Diode ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.) . Small Total Capacitance : Cx=2pF (Max.)

1S1585

Abstract: DO-204AH DO204AH
Contextual Info: 1S1585 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 2 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8)

Contextual Info: 1S1585 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150m V(RRM)(V) Rep.Pk.Rev. Voltage90 t(rr) Max.(s) Rev.Rec. Time2n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)100u V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)100m

PC40S14D1PR1

Abstract: 2SC982 1S1585
Contextual Info: 1/4 TECHNICAL DATA OF PC40S14D1PR1 1 Electrical Characteristics Part Number PC40S14D1PR1 1 * Reflective Sensitivity (mVpp) 2 * Decay time (at10mVpp) (msec.) 3 Resonant Frequency (kHz) 4 Resonant Impedance (Ω) 5 Anti-Resonant Frequency (kHz) 6 Anti-Resonant Impedance

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

TC35310F

Abstract: TC35-300 TC3531OF TC35300BP tc35300 DIP18 MFP20 ku band signal generator
Contextual Info: INTEGRATED CIRCUIT TOSHIBA TECHNICAL TELECOMMUNICATION LSI TC35300BP,TC35310F DATA T C 3530 0B P JC 353 10F DTMF RECEIVER 1. GEN ERAL DESCRIPTION TC35300BP.TC35310F are the LSI designed for detecting Dual Tone Multi Frequency (DTMF) used for Push Button (PB) signal. The DTMF signal is detected

2SKI34

Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Contextual Info: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

ultrasonic 40khz sensor test circuit

Abstract: ultrasonic transmitter nippon 40khz ultrasonic transmitter 1S1585 ultrasonic sensor 40khz 2SC982 40KHz Ultrasonic receiver ultrasonic level sensor 40khz sensor ultrasonic sensor 40khz sensor Ultrasonic transmitter receiver
Contextual Info: Test circuit Frequency characteristic Transmitter SPL :0dB=0.0002 bar standard microphone test object REC AMP OSC COUNT 300mm anechoic chamber frequency synchronizing Frequency characteristic Receiver(sensitivity) :0dB=1V/μbar 94dB constant sound field feedback

1S1588

Abstract: 1s1585-1s1588 Diode 1S1588 1s1587 diode Diode 1S1587 1S1587 18158 1S1585 1S1586 SC-40
Contextual Info: ~W? TOSHIBA -CDISCRETE/0PT03- '• 9097250 TOSHIBA DISCRETE/OPTO DE | c]Dci7ES0 a D D T S T 11! 7 | ' 67C 0 .9 2 9 9 _ D S ilic o n E p ita x ia l' P la n a r T y p e 1 S 1 5 8 5 -1 S 1 5 8 8 D io d e ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.)

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

TC35300BP

Abstract: tc35300 TC35310F TC35-300 440H2 TC35310 ao65 DIP18-P-300A
Contextual Info: r in t e g r a t e d c ir c u it TELECOMMUNICATION TO SH IBA T EC H N IC A L DATA LSI TC35300BP,TC3531OF TC35300BPJC35310F DTMF RECEIVER 1. g e n e r a l d e s c r ip t io n TC35300BP.TC35310F are the LSI designed for detecting Dual Tone Multi Frequency (DTMF) used for

IS1588

Abstract: Diode IS1588 1S1588 1S1585 Diode 1S1587 1S1587 Diode 1S1588 1s1587 diode 1s1585-1s1588 100S
Contextual Info: Silicon Epitaxial' Planar Type ï ft F r 1S15 8 5 -1 $1588 Diode Unit in mm r I • I* ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES; * . Low Forward Voltage : Vf =1.0V Max. t « Small Total Capacitance : Cx=2pF (Max.) » ► . Fast Reverse Recovery Time : Trr-2ns (Max.)

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

DIODE S4 29

Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SC982

Abstract: PC40S14D1PR1 PC40S-15 1S1585 pc40s15e1pr1
Contextual Info: 1/4 TECHNICAL DATA OF PC40S15E1PR1 1 Electrical Characteristics Part Number PC40S15E1PR1 1 * Reflective Sensitivity (mVpp) 2 * Decay time (at10mVpp) (msec.) 3 Resonant Frequency (kHz) 4 Resonant Impedance (Ω) 5 Anti-Resonant Frequency (kHz) 6 Anti-Resonant Impedance

c40-16u

Abstract: C40-16PU 2SC982 16PU 1S1585
Contextual Info: 測定回路 送信側（音圧測定） ： 0dB = 0.0002 bar 測定物 標準ﾏｲｸ 実効値10V ﾚｺｰﾀﾞ ｱﾝﾌﾟ 発振器 ｶｳﾝﾀ 300mm 無響箱 （周波数周期） 受信側（感度測定） ： 0dB = 1V/μbar （音場94dB一定）

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any