1SS300 Search Results

1SS300

Contextual Info: 1SS300 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Unit in mm 21 ±0.1 SC-70 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 1.25 ± 0.1 VF=0.92V Typ. t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . )

1SS300

Contextual Info: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)

1SS300

Contextual Info: TOSHIBA 1SS300 1 SS300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vjt 3 = 0.92V (Typ.)

TOSHIBA DIODE

Contextual Info: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)

1SS300

Contextual Info: 1SS300 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS300 ○ 超高速度スイッチング用 z z z z 外形が小さい。 順電圧特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF 3 = 0.92V (標準)

Contextual Info: Product specification 1SS300 Features Small package Low forward voltage :VF 3 = 0.92 V(Typ) Fast reverse recovery time Small total capacitance :trr = 1.6 ns (Typ) :CT = 2.2 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Rating Unit V RM 85 V

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

Contextual Info: 1SS300 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS300 ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vp 3 = 0.92V (Typ.) : trr = 1.6ns (Typ.)

Contextual Info: 1SS300 T O SH IB A 1 SS300 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITHING APPLICATIO N. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vp 3 = 0.92V (Typ.)

maxim package marking

Abstract: MARKING A3 1SS300
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS300 Features Small package Low forward voltage :VF 3 = 0.92 V(Typ) Fast reverse recovery time Small total capacitance :trr = 1.6 ns (Typ) :CT = 2.2 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter

1SS300

Contextual Info: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications l Small package : SC-70 l Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)

1SS300

Contextual Info: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)

Contextual Info: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)

Contextual Info: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Unit in mm Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)

Contextual Info: TOSHIBA 1SS300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS3Q0 ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance U n it in mm 2.1 ± 0.1 : SC-70 : Vjr 3 = 0.92V (Typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)