1SS301 Search Results

Contextual Info: Product specification 1SS301 Features Low forward voltage:VF 3 = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF 3 = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ.)

1SS101

Abstract: 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20
Contextual Info: 1SS101 THUR 1SS301 XIN SEMICONDUCTOR ISO9002 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES R-1 For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic

Contextual Info: 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: MA Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current

Contextual Info: 1SS301 TO SHIBA 1 SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

1SS301

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm z Small package : SC-70 z Low forward voltage : VF 3 = 0.9 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.9 pF (typ.)

1SS301

Contextual Info: 1SS301 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS301 ○ 超高速度スイッチング用 z z z z 外形が小さい。 順電圧特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF 3 = 0.90V (標準)

1SS301

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS301 TO SHIBA 1 SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit in mm Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

XL SC-70

Abstract: 1SS301
Contextual Info: 1SS301 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm . Small Package :SC-70 . Low Forward Voltage :VF= 0.9V Typ. . Fast Reverse Recovery Time : trr= l •6ns(Typ.) . Small Total Capacitance :Ct =0 .9pF(Typ.) 2 -ES t MAXI M U M RATINGS (Ta=25°C)

1SS301

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF 3 = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ.)

Contextual Info: TOSHIBA 1SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 2.1 +0.1 • Small Package : SC-70 • Low Forward Voltage : Vjr 3 = 0.90V (Typ.) • Fast Reverse RecoveryTime : • Small Total Capaçitançe

1SS301

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm z Small package : SC-70 z Low forward voltage : VF 3 = 0.9 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.9 pF (typ.)

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm Small package : SC-70 Low forward voltage : VF 3 = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.)

Contextual Info: 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: PH Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current

1SS301

Contextual Info: TOSHIBA 1SS301 1 SS301 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vjt 3 = 0.90V (Typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction