2N7002DW Search Results

Contextual Info: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

MARKING GA SOT-363

Abstract: 22PF 2N7002DW
Contextual Info: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic

k72 transistor

Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

marking K72

Abstract: 2N7002DW
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002DW Features • • • • • • Power Dissipation: 0.2W Tamb=25℃ Drain Current: 115mA Drain-source Voltage: 60V

DS30120 Rev. 13

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

100KR2J-1-GP

Abstract: 2N7002DW-7-F 2N7002DW-7F-GP SFH3500-5/100KR2J-1-GP 330R2J-3-GP wistron board
Contextual Info: 5 4 3 2 5V_S0 2 TO M/B CONNECT R4 100KR2J-1-GP T/P BOARD1 07509 REVISION : 07201-1 FOR CAP NUM ODD SATA LED WLAN LED AND TP MODULE 5V_S0 3D3V_S0 FOR TPCONN1 26 FINGER PRONT 1 1 NUM_LED_1 D 6 1 5 2 4 U4 2N7002DW-7F-GP 5V_S0 R11 2 NUM_LED# 5V_S5 FOR BATFULL,STDBY

2N7002DW-7F-GP

Abstract: 100KR2J-1-GP LED21 wistron board Wistron Corporation BR141 godzilla
Contextual Info: 5 4 3 2 2 1 AUDIO_LED_1 6 1 1 6 5 2 2 5 3 3 4 U1 2N7002DW-7F-GP 5V_S0 R5 INSTEAD_LED_1 4 U8 2N7002DW-7F-GP LED4 1AUDIO_LED#_3 2 AUDIO_LED#_2 K INSTEAD_LED#_2 K LED-B-65-GP INSTEAD_LED#_3 A 2 LED-B-65-GP D 5V_S0 R16 LED8 A 560R2F-GP H:07511-1 REVISION : 07201-1

K72 TO

Abstract: transistor k72 k72 transistor 2N7002DW ID200
Contextual Info: Transys Electronics L I M I T E D SOT-363 Plastic-Encapsulated Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

k72 transistor

Abstract: transistor k72 mosfet k72 transistor marking k72 k72 sot 23 k72 transistor surface mount k72 diode k72 transistor sot 23 k72 marking code 2N7002DW
Contextual Info: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed S2

LTA 702 N

Abstract: LTA 702 42008 2N7002DW ZE marking sot-363 marking 702
Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

K72 sot

Abstract: k72 SOT-363
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002DW Features x • • • • • • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

Contextual Info: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2

k72 diode

Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002DW Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1

DIODE MARKING 534

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002DW has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

sot-363 n-channel mosfet

Abstract: 2N7002DW Small Signal MOSFET
Contextual Info: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol

Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

k72 transistor

Abstract: K72 TO mosfet k72 k72 mosfet code k72 k72 marking k72 transistor surface mount K72 n marking K72
Contextual Info: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance • • • • • • • G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed

sot-363 702

Abstract: MARKING CODE 702 2N7002DW SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is

2N7002DW SOT363

Abstract: 2N7002DW JESD22-A114 L6327
Contextual Info: 2N7002DW OptiMOS Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level • Avalanche rated 60 V V GS=10 V 3 Ω V GS=4.5 V 4 ID 0.3 A • Fast switching • Qualified according to AEC Q101

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2N7002DW Power MOSFET 3 0 0 m A, 6 0 V DU AL N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 2N7002DW uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

LTA 702 N

Abstract: MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363
Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=5Ω 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • High Density Cell Design For Ultra Low On-Resistance