2SA1734 Search Results

smd ic marking PC

Abstract: SMD MARKING 2SA1734
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1734 Features Low saturation voltage: VCE sat = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25

2SA1734

Abstract: 2SC4539
Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)

2SA1734

Abstract: 2SC4539
Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)

marking SA

Contextual Info: 2SA1734T2G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

Contextual Info: 2SA1734 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS mm m m u * wmr u Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS l.G M A X . 4 .6 M A X . 0M ±0.05 1.7 M A X . Low Saturation Voltage • • • • : V ç e ($at)~ — .5V (Max.)

Contextual Info: Product specification 2SA1734 Features Low saturation voltage: VCE sat = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25 Parameter

2SA1734

Abstract: 2SC4539
Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) · High speed switching time: tstg = 0.2 µs (typ.)

2SA1734

Abstract: 2SC4539
Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 s (typ.)

2SA1734

Abstract: 2SC4539 A1734
Contextual Info: 2SA1734 TOSHIBA 2 S A 1 734 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • Low Saturation Voltage • • • • High Speed Switching Time: ^ ^ = 0 .2 /^ (Typ.)

Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)

Contextual Info: 2SA1734T1 Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1734 Unit in m m ° POWER AMPLIFIE R APPLICATIONS 4.6MAX. o POWER SWITCHING APPLICATIONS UMAX. • Low Saturation Voltage : V c E s a t = - 0 . 5 V (Max.) ( I c = - 7 0 0 m A ) • H i g h S p e e d S w i t c h i n g T i me:

2SC4539

Abstract: 2SA1734
Contextual Info: 2SA1734 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1734 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −700 mA)

Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)

Contextual Info: T O S H IB A 2SA1734 2 S A 1 734 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 1.6MAX. —J- - 4.6MAX. 1.7MAX. • _E Low Saturation Voltage : V q e (sat)= -0 .5 V (Max.)

2SA1734

Abstract: 2SC4539 V 027
Contextual Info: TOSHIBA 2SA1734 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 734 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS Low Saturation Voltage : VCE (sat)= —0.5V (Max.) (IC = _700mA) High Speed Switching Time: tstg = 0.2/^s (Typ.)

2SA1734

Abstract: 2SC4539
Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 s (typ.)

2SA1148

Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
Contextual Info: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9

2SA1734R1G

Abstract: marking SA
Contextual Info: 2SA1734R1G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

2SA1734

Abstract: 2SC4539 A1734
Contextual Info: 2SA1734 TOSHIBA 2 S A 1 734 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V q ^ (sat)“ —0.5V (Max.) (IC= _700mA) High Speed Switching Time: ^ ^ = 0 .2 /^ (Typ.)

Contextual Info: SILICON NPN EPITAXIAL TYPE P OWE R A M P L I F I E R 2SC4539 APPLICATIONS P O WE R S W I T C H I N G A P P L I C A T I O N S Low Saturation Voltage : V C E s a t = 0 .5 V ( M a x .) (Ic =700mA) High Speed Switching Time: t stg=0.3ns Small Flat Package

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

4t marking

Abstract: 2SA1734 2SC4539 marking TB
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs