2SA1729 Search Results

Contextual Info: 2SA1729 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

smd marking AG

Abstract: AG marking transistor smd marking SMD BR 2sa172 2SA1729
Contextual Info: Transistors SMD Type High-Speed Switching Applications 2SA1729 Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter

transistor 2038

Abstract: 2SA1729 S60S6
Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage

2sa172

Abstract: 2SA1729
Contextual Info: 2SA1729 Ordering number : EN3133A SANYO Semiconductors DATA SHEET 2SA1729 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

2SA1729

Abstract: ITR04405 ITR04406 ITR04407 MV3100
Contextual Info: 2SA1729 注文コード No. N 3 1 3 3 A 三洋半導体データシート 半導体ニューズ No.N3133 をさしかえてください。 2SA1729 PNP エピタキシャルプレーナ型シリコントランジスタ 高速度スイッチング用 特長

Contextual Info: O rdering num ber: EN 3133 J 2SA1729 N o .3133 J SA \YO P N P E pitaxial P la n a r Silicon T ra n sisto r High-Speed Switching Applications F e a tu r e s • Adoption of FBET, MBIT processes •L arge c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage

2SA1729

Contextual Info: SMD Type Product specification 2SA1729 Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SA1729

Abstract: ITR04405 ITR04406 ITR04407 marking ag
Contextual Info: Ordering number:ENN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

2SA1148

Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
Contextual Info: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9

2SA1729

Contextual Info: Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

2SA1729

Contextual Info: Ordering n u m b e r:EN 3133 _ No.3133 2 S A 17 2 9 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

Contextual Info: Ordering number: E N 4655 _ No.4655 FP104 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications I F e a tu re s - Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,

fp104

Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

FP104

Abstract: 2SA1729 ITR10790 ITR10791 SB05 N4655
Contextual Info: 注文コード No. N 4 6 5 5 FP104 No. N4655 82200 FP104 特長 TR : PNP エピタキシァルプレーナ形シリコントランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・PNP トランジスタとショットキバリアダイオードを 1 パッケージに 2 素子内蔵した複合タイプであり

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

2SC5187

Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
Contextual Info: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

marking EB 202 diode

Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,

2SC5188

Abstract: 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168
Contextual Info: SAf/YO H IG H - S P E E D S W IT C H IN G A P P L IC A T IO N S {Saal! Signal Transistors SANYO:SMCF F e a t u r e s Case Outlines unit:mm) SANYO: MCP * H i g h switching speed * H i g h breakdown voltage 1 ♦ Low collector saturation voltage ♦ Very small-sized package permitting a set to be made smaller -