2SC5155 Search Results

Contextual Info: 2SC5155 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)3 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.800 h(FE) Max. Current gain.3.2k

4802

Abstract: 48023 2044B 2SC5155
Contextual Info: Ordering number:EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications unit:mm 2045B Features [2SC5155] 6.5 5.0 • High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage.

48023

Abstract: 4802 2044B 2SC5155
Contextual Info: Ordering number:EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications unit:mm 2045B Features [2SC5155] 6.5 5.0 • High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage.

Contextual Info: O rdering number : EN 4802 2SC5155 No.4802 I N PN E p itax ial P la n a r Silicon T ran sisto r SAXYO Low-Frequency General-Purpose Amp Applications i A p p lic a tio n s • V arious drivers. F e a tu re s •H igh cu rre n t capacity. • Adoption of MBIT process.

4802

Abstract: 2SC5155 VEBO-15V 48023
Contextual Info: Ordering number: EN 4802 _ 2SC5155 No.4802 NPN Epitaxial Planar Silicon Transistor SAiYO Low-Frequency General-Purpose Amp Applications A pplications • Various drivers. F eatures • High current capacity. • Adoption of MBIT process. •High DC current gain.

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

transistor 2SB1201

Abstract: transistor 2SD1207 2SA1699 2SB1205 transistor 2SD1724 transistor 2sB892 V20C 2sc4734 2SA1249 BMA250
Contextual Info: T P T i n y Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possibleto make electronic equipment smaller and slimmer.

Contextual Info: H i gh - hp g High V gg QT r an si s to r s ale Hi g h — hF E, 1 7 A B H ig h — V E B O Ti-ansi s t o r sSANYO:SMCP Case outlines unit:mm SANYO:MCP 1 :B, 2 :E, 3 :C. ” » p 1 i ca t i o n s A tp •+■ *1 « V 1* *—* *—* * High hFE (500 to 3200)

2sa1562

Contextual Info: TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,TO-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

2sc3495

Abstract: 2SA1692
Contextual Info: SAfiYO High-hpg ole H i gin — h F E . H i g h — V E B O F e a t u r e s ♦ ♦ ♦ ♦ High V^ßQ T r a n s i s t o r s T r - a n s i s t o r s l :Base SANYO:SMCP 2:Emi tter 3 -Co 1lector X cat. i o n s A p p l c High hFE 500 to 3200 * AF amp High VEBO S 15V