2SC313 Search Results

2SC3136

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: TOSHIBA 2SA1255 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2.5-0.3 High Voltage : V c b o = —200V (Min.) VCEO= —200V (Min.) Small Package Complementary to 2SC3138 •

2SC3133

Abstract: 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC 3133 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3133 is a silicon NPN ep itaxia l planar type transistor Dimensions i designed fo r RF pow er am plifiers in HF band m obile radio applications. 9.1 ± 0 . 7

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)

2SC3130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2

2SA12

Abstract: 2SC1341 IC marking jw 2SA1252 2SC3134 2SA252 sc3134
Contextual Info: Ordering number : EN 1 0 4 8 B SAMO 2SA1252/2SC3134 NO.1048B PNP/NPN Epitaxial Planar Silicon Transistors i For AF Applications Features . High v Eb o * . Wide ASO and high durability against breakdown. : 2SA1252 Absolute Maximum Ratings at Ta=256c Collector to Base Voltage

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm + 0.5 • High Voltage : V c b q —^OOV (Min.) V C E O = 200V (Min.) • Small Flat Package • Complementary to 2SA1255

2SC3130

Contextual Info: Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 0.40+0.10 ñ0.05 0.16+0.10 -0.06 ● 0.4±0.2 High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb.

2SC3134

Abstract: 2SA1252 ITR03076 7013a-009
Contextual Info: 2SA1252 / 2SC3134 注文コード No. N 1 0 4 8 D 三洋半導体データシート 半導体ニューズ No.N1048C とさしかえてください。 2SA1252 / 2SC3134 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高 VEBO, 低周波一般増幅用

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) · Small package · Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) · Small flat package · Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC3137 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SC3136 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)

MARKING CL3

Contextual Info: SILICON NPN TRIPLE DFFUSED TYPE 2SC3138 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. + CL5 2.5-CL3 FEATURES: + 12 S 1.5 -ai 5 . High Voltage : VQgQ=200V ä 'l •M . Small Flat Package . Complementary to 2SA1255 ¥ CHARACTERISTIC SYMBOL Collector-Base Voltage

2SA12 V

Abstract: 2SA12
Contextual Info: Ordering numberrEN 1048B NO.1048B SAXYO 2SA1252/2SC3134 PNP/NPN Epitaxial Planar Silicon Transistors For AF Applications % Features . H ig h VE b o . Wide ASO an d h i g h d u r a b i l i t y a g a i n s t b re a k d o w n . : 2SA1252 Absolute Maximum Ratings a t T a= 2 5 °c

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2

2SC3135

Abstract: 1049c 2SA1253 N1049D
Contextual Info: 注文コード No.N 1 0 4 9 D 2SA1253 / 2SC3135 No. N1049D O0899 ※単品カタログ No.1049C とさしかえてください。 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 2SA1253 / 2SC3135 特長 低周波一般増幅用

2SC3135

Abstract: 2SA1253 ITR03091 ITR03092 ITR03093 ITR03094
Contextual Info: Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2033A [2SA1253/2SC3135] 2.2 3.0 4.0 15.0

2SC3130

Contextual Info: Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob and reverse transfer capacitance (Common emitter) Crb

2SA1252

Abstract: 2SC3134
Contextual Info: Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 F for AF Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter

2SC3134

Abstract: 2SA1252 ITR03076 ITR03077
Contextual Info: 2SA1252 / 2SC3134 Ordering number : EN1048D SANYO Semiconductors DATA SHEET 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252

Contextual Info: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR 2 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS S C 3 1 3 8 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS TTicrVi Vnlfncrp 1-0.5 -0.3 2.5 • V n T in = -9.00V ( IVT!n V1 - ~ ' \- + 1 5 - 0 . 15 . VCEO = 200V (Min.)

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Absolute Maximum Ratings (Ta = 25°C)