2SA1255 Search Results

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1255

Contextual Info: Transistors SMD Type Silicon PNP Triple Diffused Type 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1

5as SMD Transistor

Contextual Info: Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: TOSHIBA 2SA1255 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2.5-0.3 High Voltage : V c b o = —200V (Min.) VCEO= —200V (Min.) Small Package Complementary to 2SC3138 •

Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm + 0.5 • High Voltage : V c b q —^OOV (Min.) V C E O = 200V (Min.) • Small Flat Package • Complementary to 2SA1255

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) · Small package · Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) · Small flat package · Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Maximum Ratings (Ta = 25°C)

50N240

Abstract: JE9093C LOW-POWER SILICON PNP HSE194
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Absolute Maximum Ratings (Ta = 25°C)

MARKING CL3

Contextual Info: SILICON NPN TRIPLE DFFUSED TYPE 2SC3138 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. + CL5 2.5-CL3 FEATURES: + 12 S 1.5 -ai 5 . High Voltage : VQgQ=200V ä 'l •M . Small Flat Package . Complementary to 2SA1255 ¥ CHARACTERISTIC SYMBOL Collector-Base Voltage

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Absolute Maximum Ratings (Ta = 25°C)

2SA1255

Abstract: 2SC3138 A1255
Contextual Info: 2SA1255 TO SH IBA 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • + 0.5 2 .5 -0 .3 + 0.25 High Voltage : VCBO~ —200V (Min.) V c EO= - 200V (Min.) Small Package Complementary to 2SC3138

Contextual Info: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications • Unit: mm High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255

2SA1255

Abstract: 2SC3138
Contextual Info: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS + 0.5 2.5-0.3 High Voltage • • VCBO = 200 V (Max.) Vf!F,n = 200 V (Max.) Small Flat Package Complementary to 2SA1255

2SC31384

Contextual Info: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) • Small flat package • Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Absolute Maximum Ratings (Ta = 25°C)

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SA1255 ○ 高電圧スイッチング ○ 高電圧増幅用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です。 : VCBO = −200 V (最小)

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) • Small flat package • Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications • Unit: mm High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 TOSHIBA 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS + 0.5 • High Voltage : VCBO“ —200V (Min.) VCEO= -2 0 0 V (Min.) Small Package Complementary to 2SC3138 • • M A X IM U M RATINGS (Ta = 25°C)

2SA1255

Contextual Info: 2SA1255 TOSHIBA 2 S A 12 5 5 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2 . 5 - 0.3 + 0.25 . 1 . 5 - 0.15 High Voltage : V q b q ——200V (Min.) V C EO =-200V (Min.) Small Package

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157