2SA125 Search Results

2SA1250

Contextual Info: JMnic Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING see Fig.2 PIN

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1255

Contextual Info: Transistors SMD Type Silicon PNP Triple Diffused Type 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1

5as SMD Transistor

Contextual Info: Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: Product specification 2SA1252 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Wide ASO and high durability against breakdown. 1 0.55 High VEBO. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

2SA1258

Abstract: 2SC3144
Contextual Info: Ordering number:ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features Package Dimensions • High fT. · High switching speed. · Wide ASO. unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6

2SA1256

Abstract: ITR03107 ITR03108 ITR03109
Contextual Info: Ordering number:ENN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. unit:mm 2018B [2SA1256]

2SA1258

Contextual Info: Ordering number:EN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features Package Dimensions • High fT. · High switching speed. · Wide ASO. unit:mm 2010C [2SA1258/2SC3144] JEDEC : TO-220AB

Contextual Info: TOSHIBA 2SA1255 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2.5-0.3 High Voltage : V c b o = —200V (Min.) VCEO= —200V (Min.) Small Package Complementary to 2SC3138 •

Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) • Small package • Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)

SS2205

Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3

2SA1163

Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
Contextual Info: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry

Contextual Info: Ordering n u m b e r:EN 1059D 2SA1259/2SC3145 PNP/NPN Epitaxial Planar Silicon Darlington Transistors 60V/5A High-Speed Drivers Applications F eatu res • High fj. • High switching speed. • Wide ASO. : 2SA1259 b solu te M axim um R atin gs at Ta = 25°C

ir5040

Abstract: 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 2SA1257 103 7707 transistor s 2065 af
Contextual Info: SA NY O S E M I C O N D U C T O R CORP SSE D 7 cic]7D7b 0 D 0 7 Q 4 S T 2SA1257, 2SC3143 T -2 7-09 PN P/N PN Epitaxial Planar Silicon Transistors 2 0 1 8A High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 1057B F e a tu re s • V ery sm all-sized package p erm ittin g the 2SA1257/2SC3143-applied sets to be m ade sm all and slim

2SA12

Abstract: 2SC1341 IC marking jw 2SA1252 2SC3134 2SA252 sc3134
Contextual Info: Ordering number : EN 1 0 4 8 B SAMO 2SA1252/2SC3134 NO.1048B PNP/NPN Epitaxial Planar Silicon Transistors i For AF Applications Features . High v Eb o * . Wide ASO and high durability against breakdown. : 2SA1252 Absolute Maximum Ratings at Ta=256c Collector to Base Voltage

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm + 0.5 • High Voltage : V c b q —^OOV (Min.) V C E O = 200V (Min.) • Small Flat Package • Complementary to 2SA1255

2SA1254

Abstract: 2SC2206
Contextual Info: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1254

Abstract: 2SC2206
Contextual Info: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage

2SC3143

Abstract: 2SA1257 EN1057
Contextual Info: Ordering number:EN1057B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features Package Dimensions • Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim.

2SC3145

Abstract: 1059C 2SA1259
Contextual Info: 注文コード No.N 1 0 5 9 D 2SA1259 / 2SC3145 No. N1059D N0899 半導体ニューズ No.1059A ’ 91 大信号 D.B Vol.1 No.1059C とさしかえてください。 2SA1259 / 2SC3145 特長 PNP / NPN エピタキシァルプレーナ形シリコンダーリントントランジスタ

2SC3134

Abstract: 2SA1252 ITR03076 7013a-009
Contextual Info: 2SA1252 / 2SC3134 注文コード No. N 1 0 4 8 D 三洋半導体データシート 半導体ニューズ No.N1048C とさしかえてください。 2SA1252 / 2SC3134 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高 VEBO, 低周波一般増幅用

2SA1255

Abstract: 2SC3138
Contextual Info: 2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused PCT process 2SA1255 High Voltage Switching Applications • High voltage: VCBO = −200 V (min) · Small package · Complementary to 2SC3138 Unit: mm VCEO = −200 V (min) Maximum Ratings (Ta = 25°C)

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3138 High Voltage Switching Applications • High voltage: VCBO = 200 V (max) · Small flat package · Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Maximum Ratings (Ta = 25°C)

50N240

Abstract: JE9093C LOW-POWER SILICON PNP HSE194
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30