2SB1255 Search Results

2SB1255

Abstract: 2SD1895
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 90 W HiFi output • High forward current transfer ratio hFE

2SB1255

Abstract: 2SD1895
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SB1255

Abstract: 2SD1895
Contextual Info: Inchange Semiconductor Product Specification 2SB1255 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

2SB1255

Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SD1895
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1255 APPLICATIONS ・Power amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) VCE = −10 V, IC = − 0.5 A, f = 1 MHz

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V

PT10V

Abstract: 2SB1255 2SD1895
Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V

2SB1255

Abstract: 2SD1895 IC303
Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

2SB1255

Abstract: 2SD1895
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION •With TO-3PFa package ·Optimum for 90W Hi-Fi output ·High foward current transfer ratio hFE ·Low collector-emitter saturation voltage ·Complement to type 2SD1895

2SB1255

Abstract: 2SD1895 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W HiFi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SB1255

2SB1255

Abstract: 2SD1895 SC-92
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SB1255

Abstract: 2sd1895
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1255 APPLICATIONS ·Power amplification ·Optimum for 90W high-fidelity

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 2SB1255 Package Dimensions Silicon PNP Epitaxial Planar Darlington Type U n i t : mm Power Amplifier Complementary Pair with 2SD 1895 t­ o 4 -r | la.amax. 5 . 2 m ax. ✓3.2 6.9min. o ; 3 CM H o • Features • O ptim u m for 90W hi-fi o u tp u t

Contextual Info: Power T ransistors 2SB1255 2SB1255 Silicon PNP Epitaxial Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SD1895 • Features • Optimum for 90W hi-fi output • High DC c u rre n t gain hpE : 5000—30000 • Low collector-eim itter saturation voltage (Vcei. mi): < - 2 .5 V

2SB1255

Abstract: 2SD1895
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5)

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2SB1255

Abstract: 2SD1895
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1385

Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
Contextual Info: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020