2SA1235 Search Results

2SA1235

Abstract: MF sot-23
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1235 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Excelent lineary DC forward current gain. 0.55 Small collector to emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1235A 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current -0.2 A ICM:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SA1235A TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: -0.2 A

2sa1235

Abstract: ha15090
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unlt mm Mitsubishi 2SA1235 is a super mini silicon PNP epitaxial type transistor designed for low frequency voltage amplify application.

2SA1235A

Abstract: 100HZ transistor AMm
Contextual Info: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3AMMM is a composite transistor built with two Unit：mm 2.1 2SA1235A chips in SC-88 package. 2.0 Each transistor elements are independent.

2SA1235A

Abstract: 0F1M
Contextual Info: 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT—23 2SA1235A TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES

isahaya

Abstract: 2SA1235 2SA1365 2SC3440 to-236
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1365 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce sat .

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

2SA1235A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR PNP SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current -0.2 A ICM :

2SA1235A

Contextual Info: 2SA1235A 2SA1235A TRANSISTOR PNP SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM : -0.2 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range

Contextual Info: Product specification 2SA1235 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Small collector to emitter saturation voltage. 1 Excelent lineary DC forward current gain. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1

2sa1229

Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
Contextual Info: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242

2SA1235

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, 2.5 0.5 It is designed for low frequency voltage application.

2SA1235A

Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A TRANSISTOR PNP SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current -0.2 A ICM : Collector-base voltage

2SA1235A

Abstract: RT2A00M 2SA123
Contextual Info: RT2A00M エミッタコモン２素子内蔵 複合 PNPトランジスタ 概 要 外形図 2.1 RT2A00M はPNPトランジスタ 2SA1235A を２素子内蔵し 単位：ｍｍ た複合 PNPトランジスタです。このトランジスタのご使用によ

2SA1235A

Contextual Info: 2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Low Collector Current  Low Collector Power Dissipation A L 3 3 C B

2SA1993

Abstract: 2SA1602A 2sa1993 pnp 2SA1235A 2SA1602
Contextual Info: < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Super mini type FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A ・Excellent linearity of DC forward gain 2SA1235A

2SA1235A

Abstract: RT3WLMM 100HZ 2SC3052
Contextual Info: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3WLMM is a composite transistor built with Unit：mm 2.1 2SC3052 chip and 2SA1235A chip in SC-88 package. 2.0 Each transistor elements are independent.

RT3WLMM

Abstract: 2SA1235A 100HZ 2SC3052
Contextual Info: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3WLMM is compound transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. FEATURE Silicon epitaxial type

100HZ

Abstract: 10KW 2SA1235A
Contextual Info: RECTRON 2SA1235A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.2 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR PNP SOT–23 FEATURES  Low Collector Current  Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE Symbol

2SA1235

Abstract: 2SA123 isahaya
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING 2SA1235 is a mini package resin sealed Unit：mm silicon PNP epitaxial transistor, It is designed for low frequency voltage application.

2SA1235A

Abstract: 100HZ 0-16mA
Contextual Info: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3AMMM is compound transistor built with two 2SA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157