2sa1229
Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
Contextual Info: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242
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2sa12152sa12162sa12202sa1220a+112sa12212sc3116o-1262sa12482sc31172sa12292sa1227sa12442sa12242sc31152sc3l
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2SA1281
Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400
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2sa12012sa12022sa12032sa1204+162sa12052sa12062sa12072sa12082sa12092sa12102sa12812sa12772sa12732sa12742sa12512sa12182sa12362sc32482sa12292sa1267
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2sa1424
Abstract: NE88900 NE889
Contextual Info: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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NE24483
Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC
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s01543af367af280s2n2999+152n24152n24162sa1245bfq24ne59333bfq52ne24483ne38883bft93rne13783atf-10135bft92rbf936cfx21to119
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XC6375A
Abstract: e68 DC 2SA1223 2SA122 2SA1213 MA735 XC6375 nichicon vR
Contextual Info: XC6375 Series PWM Controlled, Step down DC/DC Converters HP010199 ◆ CMOS Low Power Consumption ◆ Operating Voltage: 2.2V~10.0V ◆ Output Voltage Range: 2.0V~7.0V ◆ Output Voltage Accuracy: ±2.5% ◆ Oscillator Frequency: 100kHz • Aplications ● Cellular phones, pagers
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xc6375hp010199100khzxc6375a301+8xc6375a5012sa1223xc6375ae68 dc2sa1222sa1213ma735nichicon vr
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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s029747ss9632sb5042t306+52n59832sd5882sd732sc497hd6801v
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nichicon kz
Abstract: XC6375A
Contextual Info: XC637x Series PWM [Pulse Width Modulation] Controlled Step-up & down DC/DC Converters .lNDEX General Description page*1 Selection Guide page*1 Ordering Information page*2 XC6371 Series Characteristics XC6372 Series Characteristics XC6375 Series Characteristics
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xc637xxc6371page33pages40+6xc6372xc6375xc6376177xc6377a333nichicon kzxc6375a
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2SA1424
Contextual Info: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and
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ne327ne88900ne88912ne88933+4ne88935ne889is12i2sa1424
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2SA1424
Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Contextual Info: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and
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b427414ne88900ne88912ne88933+8ne88935ne327ne8892sa14242sa1228g503ne and micro-x2sa1223
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nichicon LK
Abstract: CQ 637 c3279 nichicon lk series
Contextual Info: XC6365/66 Series PWM Controlled, PWM/PFM Switchable Step-down DC/DC Converters Preliminary • # # # # # ♦ Input Voltage Range: 2.2~10.0V ♦ Output Voltage Range: 1.5~6.0V ±2.5% ♦ Oscillator Frequency: 300kHz(±15%) ♦ Maximum Duty Ratio: 100% ♦ High Efficiency: 92%
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xc6365/66300khzxc6366ot-25+520msec/divnichicon lkcq 637c3279nichicon lk series
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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2SA1424
Contextual Info: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION • HIG H GAIN BANDW IDTH PRO DUCT: f T = 4 GHz The NE889 series of PNP silicon transistors is designed for ultrahigh speed current mode sw itching applications and
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