2SA122 Search Results

2SA1227A

Abstract: 2SA1227 2987A C 2987A hfe1 2987A pnp 2sc2987
Contextual Info: Inchange Semiconductor Product Specification 2SA1227 2SA1227A Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC2987/2987A ·High power dissipation APPLICATIONS ·For use in audio frequency power amplifier applications

transistor 2sa1227

Abstract: transistor 2sc2987 2SA1227 2SC2987 2SA122 PB-60
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1227 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2987 APPLICATIONS ·For audio frequency power amplifier applications.

Contextual Info: TOSHIBA 2SC2983 T O SH IB A TRA N SISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 Unit in mm PO W ER AM PLIFIER APPLICATIO NS DRIVER STAGE A M PLIFIER APPLICATIO NS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SA1225 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA1227 Silicon PNP Power Transistor tt DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min) .3 PIN: 1-Bas.e • Good Linearity of I>E

2SA1225

Abstract: 2SC2983
Contextual Info: TOSHIBA 2SC2983 T O S H IB A T R A N SIST O R SILICON NPN E P IT A X IA L T Y PE PCT PRO CESS 2SC2983 P O W E R A M P L IF IE R A PPLIC A TIO N S D RIV ER STAGE A M P L IF IE R A PPLIC A T IO N S • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SA1225

2SA1225

Abstract: 2SC2983
Contextual Info: 2SA1225 TO SH IBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)

C2983

Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SA1225

Abstract: 2SC2983 A1225
Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。

2SC2987

Abstract: 2SA1227
Contextual Info: Inchange Semiconductor Product Specification 2SC2987 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION

C2983

Abstract: 2SC2983 2SA1225
Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)

2SA1225

Abstract: 2SC2983 A1225
Contextual Info: 2SA1225 TOSHIBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)

2SA1227

Abstract: 2SC2987 2SA1227A 2987A pnp 2987A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1227 2SA1227A Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SC2987/2987A ·High power dissipation APPLICATIONS ·For use in audio frequency power amplifier applications

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

2SA1115

Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Contextual Info: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225

2SA1225

Abstract: A1225 2SC2983
Contextual Info: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。

C2983

Abstract: 2SA1225 2SC2983
Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SA1220

Abstract: 2SA1220A 2SC269
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A APPLICATIONS

2SA1225

Abstract: 2SC2983
Contextual Info: TO SH IBA 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : Pp = 100 MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: NEC f ELECTRON DEVICE SILICON TRA N SISTO R / 2SA1226 H IG H F R E Q U E N C Y A M P L IF IE R PN P S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth product • Low Output Capacitance

2SA1126

Contextual Info: SILICON T R A N SIST O R 2SA1226 HIGH FREQ U EN CY A M PLIFIER PN P SILICO N EPITA XIA L T R A N SIST O R MINI MOLD FEATURES PACKAGE DIM ENSIONS in millimeter« • High Gain Bandwidth product 2 8 ± 0.2 f j = 400 M H z TYP. • Low Output Capacitance Cob = 1.1 pF TYP.

C2983

Abstract: 2SA1225 2SC2983
Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)