2SB1340 Search Results

w2a transistor

Abstract: transistor w2a 2SB1340 2SD1869 2SD1889 transistor 120v transistor w2a 40
Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor —120V, — 6A 2SB1340 •F e a t u r e s 1 ) Darlington connection for high DC current gain. 2 ) Bulll-ln resistor between base and em itter. 3 ) Built-In dam per diode. 4 ) Com plem ents the 2S D 1869. ^Absolute m axim um ratings ( T a = 2 5 'C )

2SB1340

Contextual Info: 2SB1340 Transistor, PNP Features • available in TO-220 FP SC-67 package • Darlington connection provides high dc current gain (hFE) Dimensions (Units: mm) 2SB1340 (TO-220 FP) ««« +0-3 7' -V—o 1 ¿ 3 .U 0 .1 r— i • • damper diode is incorporated

Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor 120V, —6A 2SB1340 •F e a tu re s •A b s o lu te maximum ratings (Ta—2 5 ^ } 1) 2) 3) 4) P aram eter Collector-base voltage C oiiector-em itter voltage Darlington connection fo r high D C current gain.

2SD1889

Abstract: 2SB1340
Contextual Info: SavantIC Semiconductor Product Specification 2SD1889 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1340 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2SD1889

Abstract: 2SB1340
Contextual Info: Inchange Semiconductor Product Specification 2SD1889 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1340 ・High DC current gain APPLICATIONS ・Low frequency power amplification PINNING PIN DESCRIPTION

2SB1335A

Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
Contextual Info: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346

2SD1889

Abstract: 2SB1340
Contextual Info: Transistors 2SB1340 2SD1889 96-650-B88 (96-765-D88) 288

2SD188

Contextual Info: 2SB1340 2SD1889 Transistors Power Transistor —120V, —6A 2SB1340 I •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-In resistor between base and emitter. 3 ) Built-In damper diode. 4 ) Complements the 2SD1889. •A b s o lu te maximum ratings (Ta“ 25,C )

2SB1340

Abstract: ct 1975 2SD1889 SC-75A two transistors TO-126F 4B0G
Contextual Info: 2SB1340 2SD1889 Transistors Power Transistor —'1 20V, —6A I 2SB1340 •F u tu re * 1) 2) 3) 4) • A b s o lu t e m axim u m ratin g s (T a — 25"C ) Darlington connection fo r high DC current gain. Built-In resistor between base and emitter. Built-In damper diode.

2sb1340

Contextual Info: h "7 > V 7 $ /Transistors 2SB1340 2SB1340 I fc°* * '> T iV 7° Is ~ i-M PNP > U =l > h 7 > v 7 $ Epitaxial Planar PNP Silicon Transistor Darlington H£Ji>j£^:frtSll i f f l / L o w Freq. Power Amp. • W ß ^ tü S /D im e n s io n s (Unit : mm) • ¡HSA

2SB1340

Contextual Info: 2SB1340 Transistor, PNP Features • available in T0-220 FP SC-67 package • Darlington connection provides high dc current gain (hFE) Dimensions (Units : mm) • • 2SB1340 (TO-220 FP) damper diode is incorporated built in resistors between base and emitter

2SA1385

Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
Contextual Info: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2S897

Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
Contextual Info: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3

2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A

2SA1115

Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Contextual Info: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225

2SA1441

Abstract: 2sb1340 2SA1712 2SA1763 2SB1020 2SB921 2SA1516 1729H 2SA1156 2SA1639
Contextual Info: 39 tt 2SA 2 SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2SA 2S A 2S A 2S A 2S A 2SA 2SA 2SA 2SA 1715 1716 1717 171 8 1719 1 720 1721 1722 1723 1725 1 726 1727 172 8 1729 1730 1731 1732 1733 1734 1735

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Q451

Abstract: 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A
Contextual Info: Transistors LOW VcE sat Trsnsistoffstrobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F e a tu re s 1) Low VcE(sat). V cE M = 0 .2 5 V (Typ.) (Ic / I b 2) •E x t e r n a l dim ensions (Units: mm) 2SD2098 18±0.1 r—-I = 4 A /0 .1 A ) r~fi Excellent D C current gain charac­