2SA112 Search Results

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Abstract: 2SA1122
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1122 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SC2361

Abstract: 2sa1123
Contextual Info: Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION

2SA1120

Abstract: "Audio Power Amplifier" 500ma 40v pnp
Contextual Info: Inchange Semiconductor Product Specification 2SA1120 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications PINNING PIN DESCRIPTION

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

2SC2654

Abstract: 2SA1129
Contextual Info: SavantIC Semiconductor Product Specification 2SC2654 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

2SA1124

Abstract: 2SC2632
Contextual Info: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● ● • Absolute Maximum Ratings 0.7±0.1 0.7+0.3 –0.2 ● Satisfactory foward current transfer ratio hFE collector current IC

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.

2SA1123

Abstract: 2SC2631
Contextual Info: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.0±0.2 ● 0.7±0.1 12.9±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SA1122

Abstract: Hitachi DSA0076 2SA836
Contextual Info: 2SA1122 Silicon PNP Epitaxial ADE-208-1009 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1122 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: Preliminary Datasheet 2SC2618 R07DS0273EJ0300 Previous: REJ03G0702-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Application • Low frequency amplifier  Complementary pair with 2SA1121 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)

Contextual Info: 2SA1125 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m

Contextual Info: 2SA1125T Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m

Contextual Info: 2SA1125S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

2SA1123

Abstract: 2SC2631
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC

Contextual Info: Preliminary Datasheet 2SA1121 R07DS0271EJ0300 Previous: REJ03G0636-0200 Rev.3.00 Mar 28, 2011 Silicon PNP Epitaxial Application • Low frequency amplifier  Complementary pair with 2SC2618 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)

2sc2618-rctl-h

Contextual Info: Preliminary Datasheet 2SC2618 R07DS0273EJ0300 Previous: REJ03G0702-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Application • Low frequency amplifier  Complementary pair with 2SA1121 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)

2SA1128

Contextual Info: Transistors 2SA1128 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Low collector-emitter saturation voltage VCE sat • Optimum for low-voltage operation and for converter circuits.

transistor 2sc2634

Abstract: 2SA1127 2SC2634
Contextual Info: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 4.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

2SA1123

Abstract: 2SC2631 SC-43A
Contextual Info: Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage Base open VCEO

TCW NPN

Contextual Info: 2SC2618 S iü C O N NPN E P IT A X iA î.^ LOW FREQUENCY AMPLIFIER Ccfftptarftftftiary pair wilh 2SA1121 ,» S ,.x^ . _ .,*»* r 1^ *l i t °,. & « _ » | i 1 J S r5 - v \ ï >î : : . * «* *Jf ; ’ ?* * « * ! J —s . ' * ? . î2! U-J Ï t ~ • °

Contextual Info: 2SA1121 Silicon PNP Epitaxial HITACHI Application • Low frequency am plifier • Complementary pair w ith 2SC2618 Outline MPAK 2 132 1. Emitter 2. Base 3. Collector 2SA1121 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

2SA1122

Abstract: 2SA836 Hitachi DSA00384
Contextual Info: 2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1122 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage