2SC2632 Search Results

2SA1124

Abstract: 2SC2632
Contextual Info: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● ● • Absolute Maximum Ratings 0.7±0.1 0.7+0.3 –0.2 ● Satisfactory foward current transfer ratio hFE collector current IC

2SA1124

Abstract: 2SC2632
Contextual Info: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● • Absolute Maximum Ratings 0.7±0.1 +0.3 ● 0.7–0.2 ● Satisfactory foward current transfer ratio hFE collector current IC

2SC2632

Abstract: 2SA1124 TO-92L-A1 2sa112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 4.9±0.2 0.7±0.1 0.7+0.3 –0.2 • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/

BF456

Abstract: 2sc1941k 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C S 10 Manufacturer 20 25 30 35 40 45 50 BF179A BF179A BF179A BF179B BF179B BF179B BF179C BF179C BF179C -zsDT463 MM3002 ST3002 MM3003 2SC2632 2SC2633 2N706 2N706A 2N706B 2N706C 2SC34230 2SC3423Y 2SC1012 2SC1012A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/

2SC2632

Abstract: 2SA1124
Contextual Info: Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Satisfactory linearity of forward current transfer ratio hFE

2SA1124

Abstract: 2SC2632
Contextual Info: Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Satisfactory linearity of forward current transfer ratio hFE

2SA1124

Abstract: 2SC2632 2sa112
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.9±0.2 0.7±0.1 0.7+0.3 –0.2 • Satisfactory forward current transfer ratio hFE collector current IC

2SA1124

Abstract: TRANSISTOR 2sA1124 2SC2632
Contextual Info: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● • Absolute Maximum Ratings 0.7±0.1 +0.3 ● 0.7–0.2 ● Satisfactory foward current transfer ratio hFE collector current IC

2SC2632

Abstract: 2SA1124
Contextual Info: Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 5.9±0.2 4.9±0.2 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

common collector amplifier circuit designing

Abstract: 2SC2632 common emitter amplifier Silicon PNP epitaxial planar type For low-frequency 2SA1124
Contextual Info: Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 ea

2SC2632

Abstract: 2SA1124
Contextual Info: Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SC2482

Abstract: 2SC2283 k 3496 2SC3393 2sc2562 2SC3112 2SC3124 2SC945 2sc2785 h 2SD1431
Contextual Info: - 164 - m € T y p e No. it £ Manuf. ft = SANYO M *£ TO S HIBA 1e NEC HITACHI tL * ± a F U J ITSU fé T MATSUSHITA ft 2SD1433 2SC2482 2SC3478 2SD1610 2SC2632 2SC3269 H ft ft 2SC2482 2SC3209 2SC4743 2 SC1573A 2SC3269 h n * 2SC 3467 ' = * 2SC 3468 * 2SC 3469

2SC2632

Abstract: 2SA1124
Contextual Info: Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 5.9±0.2 4.9±0.2 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

NEC 2701

Abstract: NEC 2703 2701 NEC NEC 2705 2SC2724 2sc2257 2sc2786 2674 k 2679 2SC2911
Contextual Info: 144 - a s T ype No. € Manuf. 2SC 2663 X 2SC 2665 if y 'r y H $ SANYO 2 2SC 2668 |C 2SC 2669 S 2 2SC 267Û K 2 2SC 2671 * fé T 2SC 2672 a M 2SC 2673 / □ —A 2SC 2674 2SC 2675 2SC2724 2SC2926S 2SC2787 2SC2724 2SC2058S 2SC2724 2SC2058S 2SC3776 2SC3128 2SC 267KH

2SC2720

Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
Contextual Info: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *