2SC3112 Search Results

Contextual Info: 2SC3112 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C3 1 1 2 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • High DC Current Gain High Breakdown Voltage High Collector Current 5.1 M AX. hpE = 600~3600 VCEO = 50V

2SC3112

Abstract: 2sc3112 equivalent 2SC3112 B
Contextual Info: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA (max)

2SC3112

Contextual Info: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max)

2SC3112

Contextual Info: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max)

2SC3112

Contextual Info: 2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3112 For Audio Amplifier and Switching Applications • Unit: mm High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max)

2SC3112

Abstract: rc airplane
Contextual Info: 2SC3112 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 3 1 12 Unit in mm FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS • • • High DC Current Gain High Breakdown Voltage High Collector Current . 5.1 M A X . hpE —600~3600

2SC3112

Contextual Info: 2SC3112 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3112 ○ 低周波増幅用 ○ 一般スイッチング用 単位: mm • 直流電流増幅率が非常に高い。 : hFE = 600~3600 • 高耐圧です。 : VCEO = 50 V

BCY651X

Abstract: 2N6540 SG-333 bsw43a SG333 2N5081 2N2097A BCY65EPDM SE4020 2N2094A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2SC3623K JE9153A 2SC3112A 2SC3295 2SD1582K JE9153B JE9153 JE9153C 2SC3112B MPS3725 ~~:i;525 15 20 25 30 TP4014 2SC3325 BSW42A BSX51A BSX51A BSX51A PN4014 2N4014 25C3393S BSW43A BSW43A BSX52A BSX52A

2SC3112

Abstract: 2sc3112 equivalent
Contextual Info: ST 2SC3112 NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications. 1.Emitter 3.Collector 2.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

2SC3112

Contextual Info: TOSHIBA 2SC3112 2 S C 3 1 12 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR A U D IO AM PLIFIER A N D SW ITCH ING APPLICATIO NS • • • High DC Current Gain High Breakdown Voltage High Collector Current . 5.1 M AX. hpE —600~3600

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

2sd1878

Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö

2SC3115

Abstract: sC4633 2sc3114 2SC3136 2SC3098 2SC3099 2SC3102 2SC3103 2SC3104 2SC3105
Contextual Info: - 146 - WtXËfà 2g -g ÍT ffl -n & Vç b o VcEO IC DC Pc Pc* (A) (W) (W) (V) (V) 2SC3098 VHF/UHF LN A 30 20 0.05 0.15 20 0.03 0.15 2SC3099 * 2 VHF/UHF LN A 20 2SC31Ö1 HF PA 35 2SC3103 H# H « Hæ 2SC3104 (Ta=25°C) ( T a = 2 5 U *EP(ÌTc=25£C) ICBO. (max)

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SKI34

Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Contextual Info: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

Contextual Info: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400

2sc286

Abstract: 2SC1815 2SA1015 2SC2754 2SA1015 2SA970 2SA1316 2SA1015 GR 2SA1164 2SC1815 2SC2240
Contextual Info: Powered .TOSHIBA by TO-92 ÌSSTM \ 0 |0 iCO N ro ui o Electronic-Library > TRANSISTOR < V c e (Sat M AX. hFE 'C PC (V) (mA) (mW) (mA) General Purpose 2SC1815 ! 2SA1015 50 150 400 70~700/400 6 2 0.25/0.3 100 10 (80) 10 1 10 6 0.1 1K 10 General Purpose . i .

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *