2SC3295 Search Results

2SC3295 - A

Contextual Info: 2SC3295 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • High hpE High Voltage High Collector Current Small Packge hpE = 600 ~ 3600 v CEO = 50V IC = 150mA Max. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC3295

Contextual Info: 2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3295 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)

2SC3295

Contextual Info: 2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3295 Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 · High voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package

2SC3295

Abstract: marking IAY A1UA transistor marking bh ra
Contextual Info: TOSHIBA 2SC3295 TOSHIBA TRANSISTOR SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC3295 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • + 0.5 2.5 — 0.3 High hpE High Voltage High Collector Current Small Packge : hpE —600 ~ 3600

TOSHIBA A5

Contextual Info: TOSHIBA 2SC3295 TOSHIBA TRANSISTOR SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC3295 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • + : hjTE-600 ~ 3600 High Iif e High Voltage High Collector Current Small Packge 0.5

Contextual Info: T O SH IB A 2SC3295 TOSHIBA TRANSISTOR SILICON NPN EPITAXIALTYPE PCT PROCESS 9 Çf ? 7 QR AUDIO FREQUENCY AM PLIFIER APPLICATIONS. U n it in mm SWITCHING APPLICATIONS. + 0.5 2. 5 - 0.3 • High hpE hpE = 600 ~ 3600 • High Voltage VCEO = 50V • High Collector Current

"marking PA"

Abstract: 2SC3295 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage: VCEO = 50 V. 1 0.55 High hFE: hFE = 600 3600. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current: IC = 150 mA max .

2SC3295

Contextual Info: 2SC3295 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3295 ○ 低周波増幅用 ○ 一般スイッチング用 単位: mm • 直流電流増幅率が非常に高い。 : hFE = 600~3600 • 高耐圧です。 : VCEO = 50 V

Contextual Info: 2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3295 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)

BCY651X

Abstract: 2N6540 SG-333 bsw43a SG333 2N5081 2N2097A BCY65EPDM SE4020 2N2094A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2SC3623K JE9153A 2SC3112A 2SC3295 2SD1582K JE9153B JE9153 JE9153C 2SC3112B MPS3725 ~~:i;525 15 20 25 30 TP4014 2SC3325 BSW42A BSX51A BSX51A BSX51A PN4014 2N4014 25C3393S BSW43A BSW43A BSX52A BSX52A

2SC3295

Contextual Info: TO SH IBA 2SC3295 TOSHIBA TRANSISTOR SILICON NPN EPITAXIALTYPE PCT PROCESS 2SC3295 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • High hpE High Voltage High Collector Current Small Packge + 0.5 2.5 —0.3 : hf e —600 ~ 3600

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SKI34

Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Contextual Info: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

2SD1165A

Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
Contextual Info: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入